Metallic electrode forming method and semiconductor device having metallic electrode
First Claim
1. A metallic electrode forming method for a semiconductor device comprising:
- forming a bed electrode on a principal surface of a semiconductor substrate, wherein the bed electrode is electrically connected to a semiconductor element;
forming a protective film on the bed electrode, and forming an opening in the protective film so that the bed electrode is exposed from the opening;
forming a metallic film on the protective film to cover the protective film and the opening of the protective film;
mounting the semiconductor substrate with the metallic film on an adsorption stage, and measuring a surface shape of at least a part of the metallic film by a surface shape measuring means, wherein the adsorption stage adsorbs and fixes the semiconductor substrate on the stage, and wherein the part of the metallic film is disposed on the protective film;
deforming the semiconductor substrate based on a surface shape data of the part of the metallic film by using a deforming means capable of displacing the semiconductor substrate so that a difference between the principal surface of the semiconductor substrate and a cutting surface is within a predetermined range, and wherein the deforming means is disposed on a stage side;
measuring a surface shape of the principal surface of the semiconductor substrate, and determining whether a difference between the cutting surface and the principal surface of the semiconductor substrate is within a predetermined range; and
cutting the semiconductor substrate with the metallic film along with the cutting surface so that the metallic film is patterned to be a metallic electrode when the difference between the cutting surface and the principal surface of the semiconductor substrate is within the predetermined range.
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Accused Products
Abstract
A metallic electrode forming method includes: forming a bed electrode on a substrate; forming a protective film with an opening on the bed electrode to expose the bed electrode from the opening; forming a metallic film covering the protective film and the opening; mounting the substrate on an adsorption stage, and measuring a surface shape of the metallic film by a surface shape measuring means; deforming the substrate by a deforming means so that a difference between the principal surface and a cutting surface is within a predetermined range; measuring a surface shape of the principal surface, and determining whether the difference is within a predetermined range; and cutting the substrate along with the cutting surface so that the metallic film is patterned to be a metallic electrode.
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Citations
23 Claims
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1. A metallic electrode forming method for a semiconductor device comprising:
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forming a bed electrode on a principal surface of a semiconductor substrate, wherein the bed electrode is electrically connected to a semiconductor element; forming a protective film on the bed electrode, and forming an opening in the protective film so that the bed electrode is exposed from the opening; forming a metallic film on the protective film to cover the protective film and the opening of the protective film; mounting the semiconductor substrate with the metallic film on an adsorption stage, and measuring a surface shape of at least a part of the metallic film by a surface shape measuring means, wherein the adsorption stage adsorbs and fixes the semiconductor substrate on the stage, and wherein the part of the metallic film is disposed on the protective film; deforming the semiconductor substrate based on a surface shape data of the part of the metallic film by using a deforming means capable of displacing the semiconductor substrate so that a difference between the principal surface of the semiconductor substrate and a cutting surface is within a predetermined range, and wherein the deforming means is disposed on a stage side; measuring a surface shape of the principal surface of the semiconductor substrate, and determining whether a difference between the cutting surface and the principal surface of the semiconductor substrate is within a predetermined range; and cutting the semiconductor substrate with the metallic film along with the cutting surface so that the metallic film is patterned to be a metallic electrode when the difference between the cutting surface and the principal surface of the semiconductor substrate is within the predetermined range. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device comprising:
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a semiconductor substrate having a principal surface and a backside surface; a bed electrode electrically connected to a semiconductor element, wherein the bed electrode is disposed on the principal surface of the semiconductor substrate; a protective film disposed over the bed electrode, wherein the protective film includes an opening, through which a part of the bed electrode is exposed; and a metallic electrode disposed in the opening of the protective film and contacts the part of the bed electrode, wherein flatness deviation of a surface of the protective film and a surface of the metallic electrode is smaller than asperity of the backside surface of the semiconductor substrate, and wherein the metallic electrode is provided in such a manner that a metallic film for covering the protective film and the opening of the protective film is cut so as to be patterned as the metallic electrode under a condition where the semiconductor substrate with the metallic film is mounted on an adsorption stage. - View Dependent Claims (10, 11, 12, 13)
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14. A metallic electrode forming method for a semiconductor device comprising:
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forming a bed electrode on a principal surface of a semiconductor substrate, wherein the bed electrode is electrically connected to a semiconductor element; forming a protective film on the bed electrode, and forming an opening in the protective film so that the bed electrode is exposed from the opening; forming a metallic film on the protective film to cover the protective film and the opening of the protective film; mounting the semiconductor substrate on a first adsorption stage to contact the metallic film on the first adsorption stage, wherein the first adsorption stage includes a first flat surface for adsorbing the semiconductor substrate thereon; arranging a flattening stage having a second flat surface, which is parallel to the first flat surface of the first adsorption stage, inserting a filler between a backside surface of the semiconductor substrate and the second flat surface of the flattening stage, and curing the filler so as to flatten a cutting surface of the semiconductor substrate, wherein the backside surface is opposed to the principal surface; and adsorbing and fixing the semiconductor substrate on a second adsorption stage through the filler, and cutting the semiconductor substrate with the metallic film along with the cutting surface so that only a part of the metallic film remains in the opening of the protective film, wherein the part of the metallic film provides a metallic electrode. - View Dependent Claims (15, 16)
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17. A metallic electrode forming method for a semiconductor device comprising:
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forming a bed electrode on a principal surface of a semiconductor substrate, wherein the bed electrode is electrically connected to a semiconductor element; forming a protective film on the bed electrode, and forming an opening in the protective film so that the bed electrode is exposed from the opening; forming a metallic film on the protective film to cover the protective film and the opening of the protective film; mounting the semiconductor substrate on a first adsorption stage to contact the metallic film on the first adsorption stage, wherein the first adsorption stage includes a first flat surface for adsorbing the semiconductor substrate thereon; arranging the semiconductor substrate over a third adsorption stage in such a manner that the backside surface faces the third adsorption stage, arranging a displacing means under the third adsorption stage in such a manner that the displacing means is opposite to the semiconductor substrate, and applying displacement to the third adsorption stage so that the third adsorption stage fits and contacts the backside surface of the semiconductor substrate; and adsorbing and fixing the backside surface of the semiconductor substrate on the third adsorption stage, and cutting the semiconductor substrate with the metallic film so that only a part of the metallic film remains in the opening of the protective film, wherein the part of the metallic film provides a metallic electrode. - View Dependent Claims (18, 19)
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20. A metallic electrode forming method for a semiconductor device comprising:
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forming a bed electrode on a principal surface of a semiconductor substrate, wherein the bed electrode is electrically connected to a semiconductor element; forming a protective film on the bed electrode, and forming an opening in the protective film so that the bed electrode is exposed from the opening; forming a metallic film on the protective film to cover the protective film and the opening of the protective film; and cutting the semiconductor substrate with the metallic film by using a cutting tool so that only a part of the metallic film remains in the opening of the protective film, wherein the part of the metallic film provides a metallic electrode, wherein the cutting tool includes a cutting surface, which has a first blade portion and a second blade portion, wherein the first blade portion is disposed on a first side of the cutting surface, and the second blade portion is disposed on a second side of the cutting surface, wherein the first side of the cutting surface faces a forward direction of the cutting tool, and the second side of the cutting surface faces a backward direction of the cutting tool, wherein the cutting tool moves in the forward direction, and the backward direction is opposite to the forward direction, wherein the cutting tool moves in a stepwise manner with a predetermined pitch, and wherein the pitch is determined in such a manner that;
the first blade portion cuts a stacked layer of the metallic film on the protective film;
the cutting tool is displaced by the predetermined pitch; and
the second blade portion cuts a region in which the protective film is exposed. - View Dependent Claims (21, 22, 23)
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Specification