ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

• US 20080218066A1
• Filed: 03/07/2008
• Published: 09/11/2008
• Est. Priority Date: 03/08/2007
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: KIM, Eun-Ah
• Granted Patent: US 7,868,540 B2
• Time in Patent Office: Days
• US Class Current: 313/504
• CPC Class Codes: H10K 50/826 Multilayers, e.g. opaque multilayers
• CPC Class Codes: H10K 50/841 Self-supporting sealing arrangements
• CPC Class Codes: H10K 50/846 comprising getter material or desiccants
• CPC Class Codes: H10K 50/86 Arrangements for improving contrast, e.g. preventing reflection of ambient light

Abstract

An organic light emitting diode (OLED) display device, which can use a non-emission surface of an encapsulation substrate to reflect light, can prevent a voltage applied to a cathode from dropping, and has improved mechanical reliability, and a method of manufacturing the same. The OLED display device includes a substrate; a first electrode disposed on the substrate; an organic layer disposed on the first electrode; a second electrode disposed on the organic layer; a conductive material layer disposed on the second electrode; a metal layer disposed on the conductive material layer; an encapsulation substrate disposed on the metal layer; and an encapsulant to combine the substrate with an encapsulation substrate.

Claims

1. An organic light emitting diode (OLED) display device, comprising:

a substrate;

a first electrode disposed on the substrate;

an organic layer disposed on the first electrode;

a second electrode disposed on the organic layer;

a conductive material layer disposed on the second electrode;

a metal layer disposed on the conductive material layer;

an encapsulation substrate disposed on the metal layer; and

an encapsulant to combine the substrate with the encapsulation substrate.

2. The OLED display device according to claim 1, wherein the substrate comprises a thin film transistor (TFT) comprising a semiconductor layer, a gate electrode, a source electrode and a drain electrode.

3. The OLED display device according to claim 1, wherein the metal layer is formed of one selected from the group consisting of Al, an Al alloy, Ag, an Ag alloy, and an AlNd alloy.

4. The OLED display device according to claim 1, wherein the second electrode is formed of one selected from the group consisting of Mg, Ca, Al, Ag, Ba, and an alloy thereof.

5. The OLED display device according to claim 1, wherein the conductive material layer is an anisotropic conductive film.

6. The OLED display device according to claim 1, wherein the metal layer is a cathode bus line.

7. The OLED display device according to claim 1, wherein the metal layer is disposed on a surface of the encapsulation substrate.

8. The OLED display device according to claim 1, wherein the encapsulant is a UV-curable material or a glass frit.

9. The OLED display device according to claim 1, further comprising an absorbent disposed between the second electrode and the metal layer.

15. The OLED display device according to claim 1, wherein the metal layer has a thickness of at least about 500 Å

.

16. The OLED display device according to claim 1, wherein the metal layer prevents a voltage drop from occurring in the second electrode.

10. A method of manufacturing an organic light emitting diode (OLED) display device, comprising:

forming a first electrode on a substrate;

forming an organic layer on the first electrode;

forming a second electrode on the organic layer;

forming a conductive material layer on the second electrode;

forming a metal layer on a surface of an encapsulation substrate; and

combining the substrate with the encapsulation substrate, using an encapsulant.

11. The method according to claim 10, further comprising forming a thin film transistor (TFT) comprising a semiconductor layer, a gate electrode, and a source electrode, and a drain electrode, on the substrate.

12. The method according to claim 10, wherein the conductive material layer is formed by laminating an anisotropic conductive film.

13. The method according to claim 10, further comprising disposing an absorbent in the conductive material layer.

14. The method according to claim 10, wherein the combining of the substrate with the encapsulation substrate comprises bringing the conductive material layer into contact with the metal layer.

17. The method according to claim 10, wherein the forming of the metal layer comprises forming the metal layer to a thickness of at least about 500 Å

.