Injector Emitter

• US 20080219310A1
• Filed: 07/07/2006
• Published: 09/11/2008
• Est. Priority Date: 08/05/2005
• Status: Active Grant

• Current Assignee: General Nano Optics Limited
• Original Assignee: General Nano Optics Limited
• Inventors: Shveykin, Vasily Ivanovich
• Granted Patent: US 8,204,092 B2
• Time in Patent Office: Days
• US Class Current: 372/45.01
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01S 5/1032 Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
• CPC Class Codes: H01S 5/1039 Details on the cavity length
• CPC Class Codes: H01S 5/223 Buried stripe structure H01S5/227 takes precedence
• CPC Class Codes: H01S 5/32341 blue laser based on GaN or GaP
• CPC Class Codes: H01S 5/42 Arrays of surface emitting lasers

Abstract

Injection emitters (light-emitting diodes, superluminescent emitters) are used in the form of highly-efficient solid state radiation sources within a large wavelength range and for wide field of application, including general illumination using white light emitters provided with light-emitting diodes. Said invention also relates to superpower highly-efficient and reliable injection surface-emitting lasers, which generate radiation in the form of a plurality of output beams and which are characterized by a novel original and efficient method for emitting the radiation through the external surfaces thereof.

Claims

1. The injection emitter including the semiconducting heterostructure containing at least the active layer and waveguides layers consisting of at least one sublayer and also the lateral sides of the emitter, the metallization layers consisting of at least one sublayer and the longitudinal optical axis wherein in the said heterostructure in the direction of the said longitudinal optical axis at least one sequence of the alternating emission generation region consisting of at least one subregion and emission output region consisting of at least one subregion is formed and in the above indicated sequence on the surface of the external layer of the said heterostructure on the side opposite of the emission output side and on the lateral sides of the said emitter as well as at the said generation regions on the surface of the external layer of the said heterostructure on the side to the emission output the corresponding substances are placed the refraction index of which is significantly less than the effective refraction index of the said heterostructure in the said generation regions, that in the said output regions together with the said heterostructure layers there is a semiconducting leak-in layer consisting of at least one sublayer and raising above the external surface of the said generation regions, that every said output region is restricted on its opposite sides in the direction of the said longitudinal optical axis by the output facets located under certain linear angles of inclination α

₁ and α

₂, correspondingly with respect to the external surface of the said generation region and that the ratio of the refraction index n_IN of the said leak-in layer to the effective refraction index n_eff of the said heterostructure in the said output region with the said leak-in layer included into it is equal to the number greater than one.

2. The injection emitter according to the claim 1 wherein said heterostructure in the said generation region on the side of emission output has such compositions and thicknesses of the layers when only partial restriction of emission in the said heterostructure in the said generation region on the side of emission output is realized while on the external surface of the said heterostructure of the said generation region from the side of emission output at least one said metallization layer with the high emission reflection coefficient is placed.

3. The injection emitter according to the claim 2 wherein the said metallization layer is placed on the waveguide layer of the said heterostructure.

4. The injection emitter according to the claim 1 wherein the sequence of the alternate generation regions and the output regions has such compositions and thicknesses of the heterostructure layers when on the side opposite to emission output side only partial restriction of emission in the said heterostructure is realized, at that on the external surface of the said heterostructure from the above said side at least one said metallization layer with the high emission reflection coefficient is placed.

5. The injection emitter according to the claim 7 wherein the said metallization layer is placed on the said waveguide layer of the heterostructure.

6. The injection emitter according to the claim 1 wherein the said generation regions are consist of at least two stripe generation subregions located in the direction of the said longitudinal optical axis, and the space between them is filled by corresponding substance the refraction index of which is less than the effective refraction index of the said heterostructure in the said generation subregions.

7. The injection emitter according to the claim 1 wherein corresponding metallization layers is placed on the said output regions on the external surface of the said leak-in layer.

8. The injection emitter according to the claim 1 wherein the linear angles α

₁ and α

₂ are equal to each other by the absolute value and are equal to (π

/2), at that the thickness of the said leak-in layer located in the said output region exceeds the length of the said output region multiplied by the tangent of the angle φ

of emission leak from the said active layer into the said leak-in layer where the angle φ

is determined as arc cosine of the ratio n_eff to n_IN.

9. The injection emitter according to the claim 1 wherein the said linear angles α

₁ and α

₂ are equal to each other by the absolute value and are equal to (π

/2)+(φ

).

10. The injection emitter according to the claim 1 wherein the said linear angles α

₁ and α

₂ are equal to each other by the absolute value and are equal to (π

/4)+(φ

/2).

11. The injection emitter according to the claim 1 wherein the said linear angles α

₁ and α

₂ are equal to each other by the absolute value and are equal to (3π

/4)−

(φ

/2).

12. The injection emitter according to the claim 1 wherein has at least two said sequences of the alternating generation regions and output regions connected in parallel by the current.

13. The injection emitter according to the claim 1 wherein has at least two said sequences of the alternating generation regions and output regions connected in series by the current.

14. The injection emitter according to the claim 1 wherein that contains corresponding luminescent substance on the emission output side.

15. The injection emitter according to the claim 1 wherein that contains corresponding epoxy substance on the emission output side, this corresponding epoxy substance has corresponding form and corresponding value of the refraction index.