METHOD OF ANALYZING A WAFER SAMPLE
First Claim
1. A method of analyzing a wafer sample comprising:
- detecting a first defect of a photoresist pattern on the wafer sample having a plurality of shot regions exposed with related exposure conditions, respectively;
setting up the shot regions into a first portion of the photoresist pattern and a second portion of the photoresist pattern, the first portion including the shot regions exposed with exposure conditions corresponding to a reference exposure condition and a tolerance error range of the reference exposure condition;
setting up the first defect repeatedly detected in at least two of the shot regions of the second portion as a second defect of the photoresist pattern;
obtaining a first reference image displaying the second defect;
setting up a position of the shot regions in the first portion corresponding to the second defect as a third defect of the photoresist pattern; and
setting up the third defect as weak points of the photoresist pattern.
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Accused Products
Abstract
In a method of analyzing a wafer sample, a first defect of a photoresist pattern on the wafer sample having shot regions exposed with related exposure conditions is detected. A first portion of the pattern includes the shot regions exposed with an exposure condition corresponding to a reference exposure condition and a tolerance error range of the reference exposure condition. The first defect repeatedly existing in at least two of the shot regions in a second portion of the pattern is set up as a second defect of the pattern. A first reference image displaying the second defect is obtained. The first defect of the shot regions in the first portion corresponding to the second defect is set up as a third defect corresponding to weak points of the pattern. The exposure conditions of the shot region having no weak points are set up as an exposure margin of an exposure process.
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Citations
13 Claims
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1. A method of analyzing a wafer sample comprising:
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detecting a first defect of a photoresist pattern on the wafer sample having a plurality of shot regions exposed with related exposure conditions, respectively; setting up the shot regions into a first portion of the photoresist pattern and a second portion of the photoresist pattern, the first portion including the shot regions exposed with exposure conditions corresponding to a reference exposure condition and a tolerance error range of the reference exposure condition; setting up the first defect repeatedly detected in at least two of the shot regions of the second portion as a second defect of the photoresist pattern; obtaining a first reference image displaying the second defect; setting up a position of the shot regions in the first portion corresponding to the second defect as a third defect of the photoresist pattern; and setting up the third defect as weak points of the photoresist pattern. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification