METHOD FOR SIMULATING DEPOSITION FILM SHAPE AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE

• US 20080220546A1
• Filed: 09/21/2007
• Published: 09/11/2008
• Est. Priority Date: 03/06/2007
• Status: Active Grant

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Kinoshita, Shigeru
• Granted Patent: US 7,955,876 B2
• Time in Patent Office: Days
• US Class Current: 438/16
• CPC Class Codes: H01L 22/12 for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions electrical measurement of diffusions H01L22/14
• CPC Class Codes: H01L 22/20 Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

Abstract

A deposition film shape simulation method for calculating a thickness of a thin-film formed by supplying deposition species on a substrate surface, includes: changing a parameter to be used in the calculation depending on the thickness of the deposited thin-film.

Claims

1. A deposition film shape simulation method for calculating a thickness of a thin-film formed by supplying deposition species on a substrate surface, comprising:

changing a parameter to be used in the calculation depending on the thickness of the deposited thin-film.

2. The deposition film shape simulation method according to claim 1, wherein the parameter is changed depending on whether the thickness of the thin-film deposited on the substrate surface is smaller than a first value or is greater than the first value.

3. The deposition film shape simulation method according to claim 1, wherein the parameter includes at least one of a sticking coefficient of the deposition species and a growth rate of the thin-film.

4. The deposition film shape simulation method according to claim 1, wherein the substrate surface contains an element which is different from an element constituting the thin-film.

5. The deposition film shape simulation method according to claim 1, wherein the substrate has a hole or a step.

6. The deposition film shape simulation method according to claim 1, wherein a distribution of a supply rate of the deposition species on the substrate surface is reflected.

7. The deposition film shape simulation method according to claim 1, wherein the parameter includes a supply rate of the deposition species.

8. The deposition film shape simulation method according to claim 1, wherein a supply rate of the deposition species is changed depending on the substrate surface.

9. A deposition film shape simulation method for calculating a thickness of a thin-film formed by supplying deposition species on a substrate surface, comprising:

establishing a film-forming model corresponding the substrate surface and deposition species;

setting a simulation time zero;

determining a parameter for each point of the substrate surface;

calculating a growth rate at each point of the substrate surface using the parameters;

progressing the simulation time and finding a thickness at a target point of the substrate surface;

measuring thickness at each point of the substrate surface if the thickness at the target point is smaller than a target thickness;

re-determining the parameter for each point of the substrate surface by using the thickness at each point; and

repeating the calculating, the progressing, the measuring, and the re-determining until the thickness at the target point reaches to the target thickness.

10. The deposition film shape simulation method according to claim 9, wherein the parameter is changed depending on whether the thickness of the thin-film deposited on the substrate surface is smaller than a first value or is greater than the first value.

11. The deposition film shape simulation method according to claim 9, wherein the parameter includes at least one of a sticking coefficient of the deposition species and a growth rate of the thin-film.

12. The deposition film shape simulation method according to claim 9, wherein the substrate surface contains an element which is different from an element constituting the thin-film.

13. The deposition film shape simulation method according to claim 10, wherein the substrate has a hole or a step.

14. The deposition film shape simulation method according to claim 9, wherein a distribution of a supply rate of the deposition species on the substrate surface is reflected.

15. The deposition film shape simulation method according to claim 9, wherein the parameter includes a supply rate of the deposition species.

16. The deposition film shape simulation method according to claim 9, wherein a supply rate of the deposition species is changed depending on the substrate surface.

17. The deposition film shape simulation method according to claim 9, wherein the parameter includes a plurality of the parameter sets being changed depending on one of a material of the substrate surface, a shape of the substrate surface and a deposition species.

18. An electronic device manufacturing method comprising:

determining a deposition condition of a thin-film by a deposition film shape simulation method for calculating a thickness of the thin-film formed by supplying deposition species on a substrate surface, including changing a parameter to be used in the calculation depending on the thickness of the deposited thin-film; and

depositing the thin-film under the deposition condition.

19. The electronic device manufacturing method according to claim 18, wherein the deposition condition is at least one of temperature, pressure, gas species, film thickness, surface atom species, gas flow rate, shape of a nozzle which supplies a gas, location of a nozzle which supplies a gas, shape of a growth chamber, and distance between wafers within the chamber.

20. The electronic device manufacturing method according to claim 18, wherein an intended thickness of the thin-film is equal to or less than 10 nm.