Plasma spraying for semiconductor grade silicon
First Claim
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1. A plasma gun for exciting a plasma in a stream of an arc gas, a surface portion of at least one of parts of the gun facing the plasma or a flow of powder into the gun consisting essentially of silicon.
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Abstract
A plasma spray gun configured to spray semiconductor grade silicon to form semiconductor structures including p-n junctions includes silicon parts such as the cathode or anode or other parts facing the plasma or carrying the silicon powder having at least surface portions formed of high purity silicon. The semiconductor dopant may be included in the sprayed silicon.
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Citations
12 Claims
- 1. A plasma gun for exciting a plasma in a stream of an arc gas, a surface portion of at least one of parts of the gun facing the plasma or a flow of powder into the gun consisting essentially of silicon.
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6. A plasma spraying method, comprising:
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exciting a plasma in a stream of an arc gas in a plasma gun having at least one electrode having a surface portion facing the plasma consisting essentially of silicon; injecting silicon powder into the stream having a metal impurity level of less than 10 parts per million weight; and directing the stream with the injected silicon to a substrate to form a silicon layer thereupon. - View Dependent Claims (8, 9, 10, 11, 12)
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Specification