Thin film transistor and organic light-emitting display device having the thin film transistor
First Claim
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1. A thin film transistor comprising:
- a substrate;
a semiconductor layer arranged on the substrate, the semiconductor layer including a P-type ZnO;
N layer through a reaction of a mono-nitrogen gas with a zinc precursor, the ZnO;
N layer including an un-reacted impurity element at a content of 3 at % or less;
a gate electrode arranged on the substrate; and
a source electrode and a drain electrode, each of which is arranged on the substrate for contacting a portion of the semiconductor layer.
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Abstract
Disclosed is a thin film transistor including a P-type semiconductor layer, and an organic light-emitting display device having the thin film transistor. The present invention provides a thin film transistor including a substrate, a semiconductor layer, and a gate electrode and a source/drain electrode formed on the substrate, wherein the semiconductor layer is composed of P-type ZnO:N layers through a reaction of a mono-nitrogen gas with a zinc precursor, and the ZnO:N layer includes an un-reacted impurity element at a content of 3 at % or less.
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Citations
19 Claims
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1. A thin film transistor comprising:
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a substrate; a semiconductor layer arranged on the substrate, the semiconductor layer including a P-type ZnO;
N layer through a reaction of a mono-nitrogen gas with a zinc precursor, the ZnO;
N layer including an un-reacted impurity element at a content of 3 at % or less;a gate electrode arranged on the substrate; and a source electrode and a drain electrode, each of which is arranged on the substrate for contacting a portion of the semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method for manufacturing a thin film transistor using an atomic layer deposition method, the method comprising:
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loading a substrate inside a chamber; injecting a zinc precursor inside the chamber to have the zinc precursor being chemically absorbed into the substrate; primarily purging the chamber; injecting a mono-nitrogen reaction gas inside the chamber; and secondarily purging the chamber. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A method for manufacturing a thin film transistor using a plasma chemical vapor deposition method, the method comprising:
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loading a substrate inside a chamber; and supplying a zinc precursor gas and a mono-nitrogen reaction gas onto the substrate to form a P-type ZnO;
N semiconductor layer on the substrate through the plasma reaction. - View Dependent Claims (14, 15, 16, 17, 18)
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19. An organic light-emitting display device, comprising:
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a substrate, a thin film transistor comprising; a semiconductor layer arranged on the substrate, the semiconductor layer including a P type ZnO;
N layer through a reaction of a mono nitrogen gas with a zinc precursor, the ZnO;
N layer including an un-reacted impurity element at a content of 3 at % or less;a gate electrode arranged on the substrate; and a source electrode and a drain electrode, each of which is arranged on the substrate for contacting a portion of the semiconductor layer; and an organic light emitting diode formed on the thin film transistor, the organic light emitting diode being driven by the thin film transistor and producing light.
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Specification