Thin film transistor and organic light-emitting display device having the thin film transistor

• US 20080224133A1
• Filed: 03/14/2008
• Published: 09/18/2008
• Est. Priority Date: 03/14/2007
• Status: Abandoned Application

• Current Assignee: Samsung Mobile Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Mobile Display Company Limited (Samsung Electronics Co. Ltd.)
• Inventors: Park, Jin-seong, Jeong, Jae-kyeong, Shin, Hyun-soo, Mo, Yeon-gon, Lee, Hun-jung, Jeong, Jong-han
• Application Number:
  US12/076,216
• Publication Number:
  US 20080224133A1
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02579 P-type
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays

Abstract

Disclosed is a thin film transistor including a P-type semiconductor layer, and an organic light-emitting display device having the thin film transistor. The present invention provides a thin film transistor including a substrate, a semiconductor layer, and a gate electrode and a source/drain electrode formed on the substrate, wherein the semiconductor layer is composed of P-type ZnO:N layers through a reaction of a mono-nitrogen gas with a zinc precursor, and the ZnO:N layer includes an un-reacted impurity element at a content of 3 at % or less.

Claims

1. A thin film transistor comprising:

a substrate;

a semiconductor layer arranged on the substrate, the semiconductor layer including a P-type ZnO;

N layer through a reaction of a mono-nitrogen gas with a zinc precursor, the ZnO;

N layer including an un-reacted impurity element at a content of 3 at % or less;

a gate electrode arranged on the substrate; and

a source electrode and a drain electrode, each of which is arranged on the substrate for contacting a portion of the semiconductor layer.

2. The thin film transistor according to claim 1, wherein the zinc precursor includes an organic compound precursor including carbon compounds, and is selected from the group consisting of DEZ (Diethyl-Zinc), DMZ (Dimethyl-Zinc) and EMZ (Ethyl-Methyl-Zinc).

3. The thin film transistor according to claim 2, wherein the un-reacted impurity element includes carbon.

4. The thin film transistor according to claim 1, wherein the zinc precursor includes an inorganic precursor including halide compound, and is selected from the group consisting of ZnCl₂, ZnBr₂ and ZnF₂.

5. The thin film transistor according to claim 4, wherein the un-reacted impurity element includes halide.

6. The thin film transistor according to claim 1, wherein the semiconductor layer further includes an oxygen source.

7. A method for manufacturing a thin film transistor using an atomic layer deposition method, the method comprising:

loading a substrate inside a chamber;

injecting a zinc precursor inside the chamber to have the zinc precursor being chemically absorbed into the substrate;

primarily purging the chamber;

injecting a mono-nitrogen reaction gas inside the chamber; and

secondarily purging the chamber.

8. The method according to claim 7, further comprising a step of supplying an oxygen source inside the chamber.

9. The method according to claim 8, wherein the oxygen source is selected from the group consisting of H₂O steam, O₂ gas, and O₃.

10. The method according to claim 7, wherein the zinc precursor includes an organic compound precursor, and is selected from the group consisting of DEZ (Diethyl-Zinc), DMZ (Dimethyl-Zinc), and EMZ (Ethyl-Methyl-Zinc).

11. The method according to claim 7, wherein the zinc precursor includes an inorganic precursor including halide compound, and is selected from the group consisting of ZnCl₂, ZnBr₂, and ZnF₂.

12. The method according to claim 7, wherein the mono-nitrogen reaction gas is selected from the group consisting of NO₂, NH₃, NO, NF₃, NCL₃, NI₃, and NBr₃.

13. A method for manufacturing a thin film transistor using a plasma chemical vapor deposition method, the method comprising:

loading a substrate inside a chamber; and

supplying a zinc precursor gas and a mono-nitrogen reaction gas onto the substrate to form a P-type ZnO;

N semiconductor layer on the substrate through the plasma reaction.

14. The method according to claim 13, further comprising a step of supplying an oxygen source inside the chamber.

15. The method according to claim 14, wherein the oxygen source is selected from the group consisting of H₂O steam, O₂ gas, and O₃.

16. The method according to claim 13, wherein the zinc precursor gas includes an organic compound precursor, and is selected from the group consisting of DEZ (Diethyl-Zinc), DMZ (Dimethyl-Zinc), and EMZ (Ethyl-Methyl-Zinc).

17. The method according to claim 13, wherein the zinc precursor gas includes an inorganic precursor including halide compound, and is selected from the group consisting of ZnCl₂, ZnBr₂, and ZnF₂.

18. The method according to claim 13, wherein the nitrogen reaction gas is selected from the group consisting of NO₂, NH₃, NO, NF₃, NCL₃, NI₃, and NBr₃.

19. An organic light-emitting display device, comprising:

a substrate,

a thin film transistor comprising;

a semiconductor layer arranged on the substrate, the semiconductor layer including a P type ZnO;

N layer through a reaction of a mono nitrogen gas with a zinc precursor, the ZnO;

N layer including an un-reacted impurity element at a content of 3 at % or less;

a gate electrode arranged on the substrate; and

a source electrode and a drain electrode, each of which is arranged on the substrate for contacting a portion of the semiconductor layer; and

an organic light emitting diode formed on the thin film transistor, the organic light emitting diode being driven by the thin film transistor and producing light.