METHOD AND STRUCTURE FOR DETERMINING THERMAL CYCLE RELIABILITY
First Claim
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1. A test structure used to determine reliability performance, comprising:
- a patterned metallization structure having a plurality of interfaces, which provide stress risers;
a dielectric material surrounding the metallization structure, where a mismatch in coefficients of thermal expansion (CTE) between the metallization structure and the surrounding dielectric material exist such that a thermal strain value is provided to cause failures under given stress conditions as a result of CTE mismatch to provide a yield indicative of reliability for a manufacturing design.
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Abstract
A device and method for evaluating reliability of a semiconductor chip structure built by a manufacturing process includes a test structure built in accordance with a manufacturing process. The test structure is thermal cycled and the yield of the test structure is measured. The reliability of the semiconductor chip structure built by the manufacturing process is evaluated based on the yield performance before the thermal cycling.
13 Citations
20 Claims
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1. A test structure used to determine reliability performance, comprising:
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a patterned metallization structure having a plurality of interfaces, which provide stress risers; a dielectric material surrounding the metallization structure, where a mismatch in coefficients of thermal expansion (CTE) between the metallization structure and the surrounding dielectric material exist such that a thermal strain value is provided to cause failures under given stress conditions as a result of CTE mismatch to provide a yield indicative of reliability for a manufacturing design. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A test structure used to determine reliability performance, comprising:
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a patterned metallization structure having a plurality of interfaces, which provide stress risers; a dielectric material surrounding the metallization structure, where a mismatch in coefficients of thermal expansion (CTE) between the metallization structure and the surrounding dielectric material exist such that a thermal strain value is provided to cause failures under given stress conditions as a result of CTE mismatch to provide a yield indicative of reliability for a manufacturing design; the test structure including at least one of;
a via chain formed through layers of the test structure such that a plurality of widths of vias are used to adjust strain in different layers, and a dummy structure configured to provide a via density in an area of the test structure to adjust strain in adjacent structures of the test structure. - View Dependent Claims (17, 18, 19, 20)
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Specification