Luminescent Diode Provided with a Reflection- Reducing Layer Sequence

• US 20080224156A1
• Filed: 06/15/2005
• Published: 09/18/2008
• Est. Priority Date: 07/30/2004
• Status: Abandoned Application

• Current Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Wirth, Ralph, Schmid, Wolfgang, Pietzonka, Ines
• Application Number:
  US11/659,066
• Publication Number:
  US 20080224156A1
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 33/105 with a resonant cavity structure
• CPC Class Codes: H01L 33/465 with a resonant cavity structure

Abstract

A luminescence diode (1) having an active zone (7) which emits electromagnetic radiation in a main radiating direction (15). A reflection-reducing layer sequence (16) is arranged downstream of the active zone (7) in the main radiating direction (15). The reflection-reducing layer sequence includes a DBR mirror (13), which is formed by at least one layer pair (11, 12), an antireflective layer (9) downstream of the DBR mirror (13) in the main radiating direction (15) and an intermediate layer (14) arranged between the DBR mirror (13) and the antireflective layer (9).

Claims

1. A luminescence diode having an active zone which emits electromagnetic radiation in a main radiating direction, a reflection-reducing layer sequence being arranged downstream of the active zone in the main radiating direction, wherein the reflection-reducing layer sequence comprises:

a DBR mirror, which is formed by at least one layer pair,

an antireflective layer downstream of the DBR mirror in the main radiating directions, and

an intermediate layer arranged between the DBR mirror and the antireflective layer.

2. The luminescence diode as claimed in claim 1, wherein the DBR mirror is formed by between 1 (inclusive) and 10 (inclusive) layer pairs.

3. The luminescence diode as claimed in claim 1, wherein the optical thickness of the intermediate layer is equal to half the wavelength of the emitted radiation.

4. The luminescence diode as claimed in claim 1, wherein the optical thickness of the antireflective layer is equal to an odd-numbered multiple of a quarter of the wavelength of the emitted radiation.

5. The luminescence diode as claimed in claim 1, wherein the antireflective layer is a dielectric layer.

6. The luminescence diode as claimed in claim 5, wherein the antireflective layer includes a silicon oxide or a silicon nitride.

7. The luminescence diode as claimed in claim 1, wherein the antireflective layer includes a radiation-transmissive conductive oxide.

8. The luminescence diode as claimed in claim 7, wherein the radiation-transmissive conductive oxide includes ZnO.

9. The luminescence diode as claimed in claim 1, wherein the antireflective layer is doped.

10. The luminescence diode as claimed in claim 1, wherein the intermediate layer is a semiconductor layer.

11. The luminescence diode as claimed in claim 10, wherein the antireflective layer forms an ohmic contact with the intermediate layer.

12. The luminescence diode as claimed in claim 1, wherein the luminescence diode is embedded in a potting composition.

13. The luminescence diode as claimed in claim 12, wherein the potting composition is an epoxy resin.

14. The luminescence diode as claimed in claim 1, wherein the total thickness of the reflection-reducing layer sequence is less than 2000 nm.

15. The luminescence diode as claimed in claim 1, wherein the luminescence diode has a substrate and a second mirror is arranged between the substrate and the active zone.

16. The luminescence diode as claimed in claim 15, wherein the second mirror is a DBR mirror.

17. The luminescence diode as claimed in claim 1, wherein the luminescence diode comprises a thin-film semiconductor body.