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Fabrication Transistors

  • US 20080224173A1
  • Filed: 09/01/2006
  • Published: 09/18/2008
  • Est. Priority Date: 10/19/2005
  • Status: Active Grant
First Claim
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1. A method for fabricating transistors, each transistor comprising a plurality of epitaxial layers on a common substrate, method comprising:

  • forming a plurality of source contacts on a first surface of the plurality of epitaxial layers;

    forming at least one drain contact on the first surface;

    forming at least one gate contact on the first surface;

    forming at least one layer of insulating material over and between the gate contact, source contacts and the drain contact for insulating the gate contact, source contacts and the drain contact;

    forming a conductive layer over and through at least a part of the at least one insulating layer for connecting the source contacts;

    forming at least one seed layer on the conductive layer; and

    forming at least one heat sink layer over the seed layer.

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