Chip structure with bumps and testing pads
First Claim
1. A chip comprising:
- a silicon substrate;
multiple MOS devices in or on said silicon substrate;
a first dielectric layer over said silicon substrate;
a metallization structure over said first dielectric layer, wherein said metallization structure comprises a first circuit layer and a second circuit layer over said first circuit layer, and wherein said metallization structure comprises electroplated copper;
a second dielectric layer between said first and second circuit layers;
a passivation layer over said metallization structure and over said first and second dielectric layers, wherein a first opening in said passivation layer is over a first contact point of said metallization structure and exposes said first contact point, wherein said passivation layer has a thickness greater than 0.35 micrometers, and wherein said passivation layer comprises a nitride layer;
a first metal layer over said passivation layer and on said first contact point, wherein said first metal layer is connected to said first contact point through said first opening, wherein said first metal layer has a thickness greater than 0.6 micrometers, greater than that of said first circuit layer and greater than that of said second circuit layer, and wherein said first metal layer comprises a first titanium-containing layer and a first copper layer over said first titanium-containing layer;
a first polymer layer over said passivation layer and over said first metal layer, wherein a second opening in said first polymer layer is over a second contact point of said first metal layer and exposes said second contact point, and wherein said first polymer layer has a thickness greater than that of said passivation layer, greater than that of said first dielectric layer and greater than that of said second dielectric layer; and
a second metal layer on said first polymer layer and on said second contact point, wherein said second metal layer is connected to said second contact point through said second opening, wherein said second metal layer has a thickness greater than 0.6 micrometers, greater than that of said first circuit layer and greater than that of said second circuit layer, and wherein said second metal layer comprises a second titanium-containing layer, a second copper layer over said second titanium-containing layer, a nickel-containing layer on said second copper layer, and a gold layer on said nickel-containing layer.
4 Assignments
0 Petitions
Accused Products
Abstract
A chip structure comprising a semiconductor substrate, a plurality of dielectric layers, a plurality of circuit layers, a passivation layer, a metal layer and at least a bump. The semiconductor substrate has a plurality of electronic devices positioned on a surface layer of the semiconductor substrate. The dielectric layers are sequentially stacked on the semiconductor substrate and have a plurality of via holes. The circuit layers are disposed on one of the dielectric layers, wherein the circuit layers are electrically connected with each other through the via holes and are electrically connected to the electronic devices. The passivation layer is disposed over the circuit layers and the dielectric layers, wherein the passivation layer comprises an opening that exposes one of the metal layers. The metal layer is disposed over the passivation layer, wherein the metal layer comprises at least a bump pad and at least a testing pad, the bump pad electrically connecting with the testing pad. The bump is disposed on the bump pad.
112 Citations
20 Claims
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1. A chip comprising:
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a silicon substrate; multiple MOS devices in or on said silicon substrate; a first dielectric layer over said silicon substrate; a metallization structure over said first dielectric layer, wherein said metallization structure comprises a first circuit layer and a second circuit layer over said first circuit layer, and wherein said metallization structure comprises electroplated copper; a second dielectric layer between said first and second circuit layers; a passivation layer over said metallization structure and over said first and second dielectric layers, wherein a first opening in said passivation layer is over a first contact point of said metallization structure and exposes said first contact point, wherein said passivation layer has a thickness greater than 0.35 micrometers, and wherein said passivation layer comprises a nitride layer; a first metal layer over said passivation layer and on said first contact point, wherein said first metal layer is connected to said first contact point through said first opening, wherein said first metal layer has a thickness greater than 0.6 micrometers, greater than that of said first circuit layer and greater than that of said second circuit layer, and wherein said first metal layer comprises a first titanium-containing layer and a first copper layer over said first titanium-containing layer; a first polymer layer over said passivation layer and over said first metal layer, wherein a second opening in said first polymer layer is over a second contact point of said first metal layer and exposes said second contact point, and wherein said first polymer layer has a thickness greater than that of said passivation layer, greater than that of said first dielectric layer and greater than that of said second dielectric layer; and a second metal layer on said first polymer layer and on said second contact point, wherein said second metal layer is connected to said second contact point through said second opening, wherein said second metal layer has a thickness greater than 0.6 micrometers, greater than that of said first circuit layer and greater than that of said second circuit layer, and wherein said second metal layer comprises a second titanium-containing layer, a second copper layer over said second titanium-containing layer, a nickel-containing layer on said second copper layer, and a gold layer on said nickel-containing layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A chip comprising:
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a silicon substrate; multiple MOS devices in or on said silicon substrate; a first dielectric layer over said silicon substrate; a metallization structure over said first dielectric layer, wherein said metallization structure comprises a first circuit layer and a second circuit layer over said first circuit layer, and wherein said metallization structure comprises electroplated copper; a second dielectric layer between said first and second circuit layers; a passivation layer over said metallization structure and over said first and second dielectric layers, wherein a first opening in said passivation layer is over a first contact point of said metallization structure and exposes said first contact point, wherein said first contact point comprises at least an area directly over at least a portion of said multiple MOS devices, wherein said passivation layer has a thickness greater than 0.35 micrometers, and wherein said passivation layer comprises a nitride layer; a first metal layer over said passivation layer and on said first contact point, wherein said first metal layer is connected to said first contact point through said first opening, wherein said first metal layer has a thickness greater than 0.6 micrometers, greater than that of said first circuit layer and greater than that of said second circuit layer, and wherein said first metal layer comprises a first titanium-containing layer and a first copper layer over said first titanium-containing layer; a first polymer layer over said passivation layer and over said first metal layer, wherein a second opening in said first polymer layer is over a second contact point of said first metal layer and exposes said second contact point, and wherein said first polymer layer has a thickness greater than that of said passivation layer, greater than that of said first dielectric layer and greater than that of said second dielectric layer; a second metal layer on said first polymer layer and on said second contact point, wherein said second metal layer is connected to said second contact point through said second opening, wherein said second metal layer has a thickness greater than 0.6 micrometers, greater than that of said first circuit layer and greater than that of said second circuit layer, wherein said second metal layer comprises a second titanium-containing layer, a second copper layer over said second titanium-containing layer, and a nickel-containing layer on said second copper layer, and wherein said second metal layer comprises at least a portion directly over at least an area of said first contact point; and a tin-containing solder over said second metal layer, wherein said tin-containing solder is connected to said first contact point through said first and second metal layers. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification