Semiconductor device and manufacturing method thereof

• US 20080224941A1
• Filed: 03/07/2008
• Published: 09/18/2008
• Est. Priority Date: 03/13/2007
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Tsurume, Takuya, Ohtani, Hisashi, Sugiyama, Eiji, Dozen, Yoshitaka
• Granted Patent: US 7,968,427 B2
• Time in Patent Office: Days
• US Class Current: 343/873
• CPC Class Codes: H01L 2223/6677 for antenna, e.g. antenna included within housing of semiconductor device antennas per se H01Q
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 23/145 Organic substrates, e.g. plastic
• CPC Class Codes: H01L 23/49855 for flat-cards, e.g. credit cards cards per se G06K19/00
• CPC Class Codes: H01L 27/105 including field-effect components
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 27/13 combined with thin-film or thick-film passive components
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/07811 Extrinsic, i.e. with electrical conductive fillers
• CPC Class Codes: H01L 2924/09701 Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/12044 OLED
• CPC Class Codes: H01Q 1/2225 used in active tags, i.e. provided with its own power source or in passive tags, i.e. deriving power from RF signal
• CPC Class Codes: H01Q 1/2283 mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
• CPC Class Codes: H10B 69/00 Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Abstract

The present invention provides a semiconductor device which is not easily damaged by external local pressure. The present invention further provides a method for manufacturing a highly-reliable semiconductor device, which is not destructed by external local pressure, with a high yield. A structure body, in which high-strength fiber of an organic compound or an inorganic compound is impregnated with an organic resin, is provided over an element layer having a semiconductor element formed using a non-single crystal semiconductor layer, and heating and pressure bonding are performed, whereby a semiconductor device is manufactured, to which the element layer and the structure body in which the high-strength fiber of an organic compound or an inorganic compound is impregnated with the organic resin are firmly fixed together.

Claims

1. A semiconductor device comprising:

an element layer with a thickness greater than or equal to 1 μ

m and less than or equal to 10 μ

m, which includes a non-single crystal semiconductor layer and in which an active element is formed using the non-single crystal semiconductor layer and covered with an insulating layer; and

a sealing layer with a thickness greater than or equal to 10 μ

m and less than or equal to 100 μ

m, in which a fibrous body is impregnated with an organic resin,

wherein the sealing layer is fixed to at least one of surfaces of the element layer.

2. The semiconductor device according to claim 1, wherein the fibrous body is a woven fabric or an unwoven fabric.

3. The semiconductor device according to claim 1, wherein the fibrous body is formed from polyvinylalcohol fiber, polyester fiber, polyamide fiber, polyethylene fiber, aramid fiber, polyparaphenylene benzobisoxazole fiber, glass fiber, or carbon fiber.

4. The semiconductor device according to claim 1, wherein the organic resin includes a thermosetting resin or a thermoplastic resin.

5. The semiconductor device according to claim 1, wherein the thermosetting resin is an epoxy resin, an unsaturated polyester resin, a polyimide resin, a bismaleimide-triazine resin, or a cyanate resin.

6. The semiconductor device according to claim 1, wherein the thermoplastic resin is a polyphenylene oxide resin, a polyetherimide resin, or a fluorine resin.

7. The semiconductor device according to claim 1, wherein the active element is one or more of a thin film transistor, a nonvolatile memory element, and a diode.

8. The semiconductor device according to claim 1, wherein an antenna which is electrically connected to the active element of the element layer is formed between the element layer and the sealing layer.

19. The semiconductor device according to claim 1, further comprising a sealing layer fixed to the other of surfaces of the element layer.

9. A semiconductor device comprising:

an element layer with a thickness greater than or equal to 1 μ

m and less than or equal to 10 μ

m, which includes a non-single crystal semiconductor layer and in which an active element is formed using the non-single crystal semiconductor layer and covered with an insulating layer; and

a sealing layer with a thickness greater than or equal to 10 μ

m and less than or equal to 100 μ

m, in which a fibrous body which is woven using a plurality of warp yarns and a plurality of weft yarns each formed by bundling a plurality of single yarns is impregnated with an organic resin,

wherein the sealing layer is fixed to at least one of surfaces of the element layer.

10. The semiconductor device according to claim 9, wherein the fibrous body is a woven fabric or an unwoven fabric.

11. The semiconductor device according to claim 9, wherein the fibrous body is formed from polyvinylalcohol fiber, polyester fiber, polyamide fiber, polyethylene fiber, aramid fiber, polyparaphenylene benzobisoxazole fiber, glass fiber, or carbon fiber.

12. The semiconductor device according to claim 9, wherein the organic resin includes a thermosetting resin or a thermoplastic resin.

13. The semiconductor device according to claim 9, wherein the thermosetting resin is an epoxy resin, an unsaturated polyester resin, a polyimide resin, a bismaleimide-triazine resin, or a cyanate resin.

14. The semiconductor device according to claim 9, wherein the thermoplastic resin is a polyphenylene oxide resin, a polyetherimide resin, or a fluorine resin.

15. The semiconductor device according to claim 9, wherein the active element is one or more of a thin film transistor, a nonvolatile memory element, and a diode.

16. The semiconductor device according to claim 9, wherein an antenna which is electrically connected to the active element of the element layer is formed between the element layer and the sealing layer.

17. The semiconductor device according to claim 9, wherein an entire surface of one of the surfaces of the element layer is covered with the fibrous body.

18. The semiconductor device according to claim 9, wherein each of a distance between the plurality of warp yarns and a distance between the plurality of weft yarns is greater than or equal to 0.01 mm and less than or equal to 0.2 mm.

20. The semiconductor device according to claim 9, further comprising a sealing layer fixed to the other of surfaces of the element layer.

21. A manufacturing method of a semiconductor device comprising:

forming a separation layer over a substrate having an insulating surface;

forming over the separation layer an element layer having an active element and an insulating layer which covers the active element, using a non-single crystal semiconductor layer;

forming over the element layer a sealing layer which includes a fibrous body and an organic resin with which the fibrous body is impregnated, by performing heating and pressure bonding after providing over the element layer a structure body in which the fibrous body is impregnated with the organic resin; and

separating the element layer from the separation layer.

22. The manufacturing method of a semiconductor device according to claim 21, wherein an antenna is included in the element layer.

23. The manufacturing method of a semiconductor device according to claim 21, wherein the active element formed using the non-single crystal semiconductor layer is one or more of a thin film transistor, a nonvolatile memory element, and a diode.

24. A manufacturing method of a semiconductor device comprising:

forming a separation layer over a substrate having an insulating surface;

forming over the separation layer an element layer having an active element and an insulating layer which covers the active element, using a non-single crystal semiconductor layer;

forming over one of surfaces of the element layer a first sealing layer which includes a fibrous body and an organic resin with which the fibrous body is impregnated, by performing heating and pressure bonding after providing over the element layer a first structure body in which the body material is impregnated with the organic resin;

separating the element layer from the separation layer; and

forming over the opposite surface of the element layer a second sealing layer which includes a fibrous body and an organic resin with which the fibrous body is impregnated, by performing heating and pressure bonding after providing over the element layer a second structure body in which the fibrous body is impregnated with the organic resin.

25. The manufacturing method of a semiconductor device according to claim 24, wherein an antenna is included in the element layer.

26. The manufacturing method of a semiconductor device according to claim 24, wherein the active element formed using the non-single crystal semiconductor layer is one or more of a thin film transistor, a nonvolatile memory element, and a diode.

27. A manufacturing method of a semiconductor device comprising:

forming a separation layer over a substrate having an insulating surface;

forming over the separation layer an element layer having an active element, an insulating layer which covers the active element, and a wiring, using a non-single crystal semiconductor layer;

forming over the element layer a sealing layer which includes a fibrous body and an organic resin with which the fibrous body is impregnated, by performing heating and pressure bonding after providing over the element layer a structure body in which the fibrous body is impregnated with the organic resin;

forming a connection terminal which is connected to the wiring by removing part of the sealing layer;

separating the element layer from the separation layer; and

attaching a substrate having an antenna to the sealing layer and electrically connecting the connection terminal and the antenna.

28. The manufacturing method of a semiconductor device according to claim 27, wherein the active element formed using the non-single crystal semiconductor layer is one or more of a thin film transistor, a nonvolatile memory element, and a diode.

29. A manufacturing method of a semiconductor device comprising:

forming a separation layer over a substrate having an insulating surface;

forming over the separation layer an element layer having an active element, an insulating layer which covers the active element, and a wiring, using a non-single crystal semiconductor layer;

forming over one of surfaces of the element layer a first sealing layer which includes a fibrous body and an organic resin with which the fibrous body is impregnated, by performing heating and pressure bonding after providing over the element layer a first structure body in which the fibrous body is impregnated with the organic resin;

forming a connection terminal which is connected to the wiring by removing part of the first sealing layer;

separating the element layer from the separation layer;

attaching a substrate having an antenna to the first sealing layer and electrically connecting the connection terminal and the antenna; and

forming over the opposite surface of the element layer a second sealing layer, which includes a fibrous body and an organic resin with which the fibrous body is impregnated, by performing heating and pressure bonding after providing over the element layer a second structure body in which the fibrous body is impregnated with the organic resin.

30. The manufacturing method of a semiconductor device according to claim 29, wherein the active element formed using the non-single crystal semiconductor layer is one or more of a thin film transistor, a nonvolatile memory element, and a diode.

31. A manufacturing method of a semiconductor device comprising:

forming a separation layer over a substrate having an insulating surface;

forming over the separation layer an element layer having an active element, an insulating layer which covers the active element, a first wiring, and a second wiring, using a non-single crystal semiconductor layer;

forming over one of surfaces of the element layer a first sealing layer which includes a fibrous body and an organic resin with which the fibrous body is impregnated, by performing heating and pressure bonding after providing over the element layer a first structure body in which the fibrous body is impregnated with the organic resin;

forming a first connection terminal which is connected to the first wiring by removing part of the first sealing layer;

separating the element layer from the separation layer;

attaching a substrate having a first antenna to the first sealing layer and electrically connecting the first connection terminal and the first antenna;

forming over the opposite surface of the element layer a second sealing layer including a fibrous body and an organic resin with which the fibrous body is impregnated, by performing heating and pressure bonding after providing over the element layer a second structure body in which the fibrous body is impregnated with the organic resin;

forming a second connection terminal which is connected to the second wiring by removing part of the second sealing layer; and

attaching a substrate having a second antenna to the second sealing layer and electrically connecting the second connection terminal and the second antenna.

32. The manufacturing method of a semiconductor device according to claim 31, wherein the active element formed using the non-single crystal semiconductor layer is one or more of a thin film transistor, a nonvolatile memory element, and a diode.