Inspection methods and systems for lithographic masks

US 20080226157A1
Filed: 03/15/2007
Published: 09/18/2008
Est. Priority Date: 03/15/2007
Status: Active Grant

First Claim

Patent Images

1. A method of determining lithographically significant reticle defects, comprising:

inspecting a reticle to find reticle defects;

obtaining a mask transmission function for each reticle defect, wherein the mask transmission function for each reticle defect is obtained from at least two images of each reticle defect, wherein a substantially constant focus offset was maintained between the focus setting of the at least two images;

inputting the obtained mask transmission function for each reticle defect into simulation software and/or hardware to calculate a defect-affected pattern in the developed photo-resist of a wafer that would be fabricated with a lithographic tool using the reticle; and

determining whether there are any lithographically significant reticle defects based on the defect-affected pattern that was calculated for each reticle defect.

View all claims

1 Assignment

Timeline View

Assignment View

0 Petitions

Accused Products

Abstract

Disclosed are apparatus and methods for finding lithographically significant defects on a reticle. In general, at least a pair of related intensity images of the reticle in question are obtained using an inspection apparatus. The intensity images are obtained such that each of the images experience different focus settings for the reticle so that there is a constant focus offset between the two focus values of the images. These images are then analyzed to obtain a transmission function of the reticle. This transmission function is then input into a model of the lithography system (e.g., a stepper, scanner, or other related photolithography system) to then produce an aerial image of the reticle pattern. The aerial image produced can then be input to a photoresist model to yield a “resist-modeled image” that corresponds to an image pattern to be printed onto the substrate using the reticle. This resist-modeled image can then be compared with a reference image to obtain defect information. In particular, due to the introduction of the lithography tool and photoresist model, this defect information pertains to lithographically significant defects.

29 Citations

View as Search Results

24 Claims

1. A method of determining lithographically significant reticle defects, comprising:
- inspecting a reticle to find reticle defects;
  
  obtaining a mask transmission function for each reticle defect, wherein the mask transmission function for each reticle defect is obtained from at least two images of each reticle defect, wherein a substantially constant focus offset was maintained between the focus setting of the at least two images;
  
  inputting the obtained mask transmission function for each reticle defect into simulation software and/or hardware to calculate a defect-affected pattern in the developed photo-resist of a wafer that would be fabricated with a lithographic tool using the reticle; and
  
  determining whether there are any lithographically significant reticle defects based on the defect-affected pattern that was calculated for each reticle defect.
- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
- - 2. A method as recited in claim 1, wherein the substantially constant focus offset was maintained between the focus setting of the at least two images during acquisition of such at least two images.
  - 3. A method as recited in claim 1, wherein the substantially constant focus offset was maintained between the focus setting of the at least two images while the average focus of the two images varies.
  - 4. A method as recited in claim 1, wherein obtaining the mask transmission function for each defect comprises:
    - obtaining at least two test images of the each defect'"'"'s area so that the test images have a constant focus offset between each other;
      
      obtaining at least two references images of another reticle area that corresponds to the each defect'"'"'s area so that the reference images have a constant focus offset between each other, or calculating the at least two reference images having a constant focus offset from a database used to manufacture the reticle;
      
      subtracting each set of test and reference images that was obtained at a substantially same focus to obtain two difference images;
      
      summing the two difference images to obtain a summed image;
      
      subtracting the two difference images to obtain a differenced image; and
      
      analyzing the resultant summed and differenced images for each defect to determine real and imaginary components of the mask transmission function for each defect.
  - 5. A method as recited in claim 4, wherein the at least two test images consist of a pair of test images and the at least two reference images consist of a pair of reference images.
  - 6. A method as recited in claim 1, wherein the at least two images of each reticle defect are obtained from at least two detectors or sensors that are positioned so as to achieve the constant focus offset between the at least two images.
  - 7. A method as recited in claim 1, wherein the at least two images of each reticle defect are obtained sequentially on two different areas of a same detector.
  - 8. A method as recited in claim 1, wherein the constant focus offset is achieved by (i) a focus setting, for a first image of the each reticle defect, of +Δ
    - relative to an optimum focus and (ii) a focus setting, for a second image of the same each reticle defect, of −
      
      Δ
      
      relative to the optimum focus, wherein the optimum focus has a focus setting equal to 0.
  - 9. A method as recited in claim 1, wherein the constant focus offset is achieved by (i) a focus setting, for a first image of the each reticle defect, equal to an optimum focus and (ii) a focus setting, for a second image of the same each reticle defect, of 2Δ
    - relative to the optimum focus.
  - 10. A method as recited in claim 1, wherein the simulation software and/or hardware includes a lithographic tool model that calculates an aerial image that would be produced by a particular lithographic tool based on the mask transmission function and includes a photoresist model for then calculating the defect-affected pattern based on the aerial image.
  - 11. A method as recited in claim 1, wherein a lithographically significant reticle defect is defined as a reticle defect that is determined to be printable in a photoresist layer of the calculated the wafer and/or within an area of the photoresist layer that has a device density over a predetermined value based on the calculated defect-assisted pattern.

12. An apparatus for determining lithographically significant reticle defects, comprising:
- one or more processors;
  
  one or more memory, wherein at least one of the processors and memory are adapted for;
  
  inspecting a reticle to find reticle defects;
  
  obtaining a mask transmission function for each reticle defect, wherein the mask transmission function for each reticle defect is obtained from at least two images of each reticle defect, wherein a substantially constant focus offset was maintained between the focus setting of the at least two images;
  
  inputting the obtained mask transmission function for each reticle defect into simulation software and/or hardware to calculate a defect-affected pattern in the developed photo-resist of a wafer that would be fabricated with a lithographic tool using the reticle; and
  
  determining whether there are any lithographically significant reticle defects based on the defect-affected pattern that was calculated for each reticle defect.
- View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
- - 13. An apparatus as recited in claim 12, wherein the substantially constant focus offset was maintained between the focus setting of the at least two images during acquisition of such at least two images.
  - 14. An apparatus as recited in claim 12, wherein the substantially constant focus offset was maintained between the focus setting of the at least two images while the average focus of the two images varies.
  - 15. An apparatus as recited in claim 12, wherein obtaining the mask transmission function for each defect comprises:
    - obtaining at least two test images of the each defect'"'"'s area so that the test images have a constant focus offset between each other;
      
      obtaining at least two references images of another reticle area that corresponds to the each defect'"'"'s area so that the reference images have a constant focus offset between each other, or calculating the at least two reference images having a constant focus offset from a database used to manufacture the reticle;
      
      subtracting each set of test and reference images that was obtained at a substantially same focus to obtain two difference images;
      
      summing the two difference images to obtain a summed image;
      
      subtracting the two difference images to obtain a differenced image; and
      
      analyzing the resultant summed and differenced images for each defect to determine real and imaginary components of the mask transmission function for each defect.
  - 16. An apparatus as recited in claim 15, wherein the at least two test images consist of a pair of test images and the at least two reference images consist of a pair of reference images.
  - 17. An apparatus as recited in claim 12, wherein the at least two images of each reticle defect are obtained from at least two detectors or sensors that are positioned so as to achieve the constant focus offset between the at least two images.
  - 18. An apparatus as recited in claim 12, wherein the at least two images of each reticle defect are obtained sequentially on two different areas of a same detector.
  - 19. An apparatus as recited in claim 12, wherein the constant focus offset is achieved by (i) a focus setting, for a first image of the each reticle defect, of +z relative to an optimum focus and (ii) a focus setting, for a second image of the same each reticle defect, of −
    - z relative to the optimum focus, wherein the optimum focus has a focus setting equal to 0.
  - 20. An apparatus as recited in claim 12, wherein the constant focus offset is achieved by (i) a focus setting, for a first image of the each reticle defect, equal to an optimum focus and (ii) a focus setting, for a second image of the same each reticle defect, of 2Δ
    - relative to the optimum focus.
  - 21. An apparatus as recited in claim 12, wherein the simulation software and/or hardware includes a lithographic tool model that calculates an aerial image that would be produced by a particular lithographic tool based on the mask transmission function and includes a photoresist model for then calculating the defect-affected pattern based on the aerial image.
  - 22. An apparatus as recited in claim 12, wherein a lithographically significant reticle defect is defined as a reticle defect that is determined to be printable in a photoresist layer of the calculated the wafer and/or within an area of the photoresist layer that has a device density over a predetermined value based on the calculated defect-assisted pattern.

23. A method for generating a reticle transmission function for a defect image, comprising:
- providing a reticle configured to achieve lithographic transfer of a reticle pattern onto a substrate using a lithography system, wherein the reticle includes at least one defect area;
  
  illuminating the defect area of the reticle;
  
  capturing a first transmission intensity image of the illuminated defect area reticle at a first focus setting;
  
  capturing a second transmission intensity image of the illuminated defect area reticle at a second focus setting, wherein a constant focus offset is maintained between the first and second focus settings or such a constant focus offset is emulated by adjusting the captured first and second transmission images; and
  
  processing the first and second transmission intensity images together to recover and store a reticle transmission function for the defect area such that quadratic terms of the function cancel each other out leaving a linear function characterized by the mask pattern convolved with a recovery kernel.
- View Dependent Claims (24)
- - 24. A method as recited in claim 23, wherein the reticle transmission function for the defect area is characterized as:
    - $[I_{Test} (x, y, z) - I_{Ref} (x, y, z)] - [I_{Test} (x, y, - z) - I_{Ref} (x, y, - z)] = {i2c}_{T} \sum_{i = 0}^{N} λ_{i} (z) \frac{1}{2} {\begin{matrix} W_{i} (- z) [D_{I} (x, y) \otimes E_{i} (x, y, z)] - \\ W_{i} (z) [D_{I} (x, y) \otimes E_{i} (x, y, - z)] \end{matrix}} + \dots i 2 a_{T} \sum_{i = 0}^{N} λ_{i} (z) \frac{1}{2} {\begin{matrix} [P (x, y) \otimes E_{i} (x, y, - z)] \cdot [D_{I} (x, y) \otimes E_{i} (x, y, z)] - \\ [P (x, y) \otimes E_{i} (x, y, z)] \cdot [D_{I} (x, y) \otimes E_{i} (x, y, - z)] \end{matrix}} i \sum_{i = 0}^{N} λ_{i} (z) \frac{1}{2} {\begin{matrix} [D_{R} (x, y) \otimes E_{i} (x, y, - z)] \cdot [D_{I} (x, y) \otimes E_{i} (x, y, z)] - \\ [D_{R} (x, y) \otimes E_{i} (x, y, z)] \cdot [D_{I} (x, y) \otimes E_{i} (x, y, - z)] \end{matrix}}$ ${[I_{Test} (x, y, z) - I_{Ref} (x, y, z)] + [I_{Test} (x, y, z) - I_{Ref} (x, y, z)]} / 2 = \sum_{i = 0}^{N} λ_{i} (z) {\begin{matrix} [D_{R} (x, y) \otimes E_{i} (x, y, - z)] \cdot [D_{R} (x, y) \otimes E_{i} (x, y, z)] + \\ [D_{I} (x, y) \otimes E_{i} (x, y, - z)] \cdot [D_{I} (x, y) \otimes E_{i} (x, y, z)] \end{matrix}} + \dots 2 c_{T} \sum_{i = 0}^{N} λ_{i} (z) \frac{1}{2} {\begin{matrix} W_{i} (z) [D_{R} (x, y) \otimes E_{i} (x, y, - z)] + \\ W_{i} (- z) [D_{R} (x, y) \otimes E_{i} (x, y, z)] \end{matrix}} + \dots 2 a_{T} \sum_{i = 0}^{N} λ_{i} (z) \frac{1}{2} {\begin{matrix} [P (x, y) \otimes E_{i} (x, y, - z)] \cdot [D_{R} (x, y) \otimes E_{i} (x, y, z)] + \\ [P (x, y) \otimes E_{i} (x, y, z)] \cdot [D_{R} (x, y) \otimes E_{i} (x, y, - z)] \end{matrix}}$

Specification

Resources

Litigation Campaign Assessment

Current Assignee
Kla-Tencor Technologies Corporation (KLA Corporation)
Original Assignee
Kla-Tencor Technologies Corporation (KLA Corporation)
Inventors
Stokowski, Stanley E.

Granted Patent

US 7,564,545 B2
Time in Patent Office

Days
Field of Search
US Class Current

382/144
CPC Class Codes

G03F 7/705 Modelling or simulating fro...

Inspection methods and systems for lithographic masks

First Claim

1 Assignment

0 Petitions

Accused Products

Abstract

29 Citations

24 Claims

Specification

Use Cases

Quick Links

Others

Inspection methods and systems for lithographic masks

First Claim

1 Assignment

Subscription Required

Subscription Required

0 Petitions

Subscription Required

Accused Products

Subscription Required

Abstract

29 Citations

24 Claims

Specification

Subscription Required

Use Cases

Quick Links

Others