Method of manufacturing semiconductor element

• US 20080227277A1
• Filed: 02/27/2008
• Published: 09/18/2008
• Est. Priority Date: 02/28/2007
• Status: Active Grant

• Current Assignee: Fuji Electric Company Limited (Fuji Electric Systems Company Limited)
• Original Assignee: Fuji Electric Device Technology Company Limited (Fuji Electric Systems Company Limited)
• Inventors: Nakazawa, Haruo
• Granted Patent: US 7,807,554 B2
• Time in Patent Office: Days
• US Class Current: 438/550
• CPC Class Codes: H01L 21/26513 of electrically active species
• CPC Class Codes: H01L 21/2658 of a molecular ion, e.g. decaborane
• CPC Class Codes: H01L 21/268 using electromagnetic radiation, e.g. laser radiation
• CPC Class Codes: H01L 29/167 further characterised by the doping material H01L29/1604 takes precedence
• CPC Class Codes: H01L 29/66333 Vertical insulated gate bipolar transistors
• CPC Class Codes: H01L 29/7395 Vertical transistors, e.g. vertical IGBT

Abstract

A method of manufacturing a semiconductor element includes implanting ions of a dopant having a large diffusion coefficient into a semiconductor to provide a doped layer; and irradiating the doped layer with a plurality of pulsed laser beams supplied by a plurality of laser irradiation devices to activate the doped layer and provide an activated doped layer. The activated doped layer may be one of a single doped layer or a plurality of successive doped layers which each have respective conduction types that are one of identical or different. Device breakage and failure of the manufactured semiconductor element due to heat induced during laser irradiation are substantially prevented by this method.

Claims

1. A method of manufacturing a semiconductor element, comprising:

implanting ions of a dopant having a large diffusion coefficient into a semiconductor to provide a doped layer; and

irradiating the doped layer with a plurality of pulsed laser beams supplied by a plurality of laser irradiation devices to activate the doped layer and provide an activated doped layer that is one of a single doped layer or a plurality of successive doped layers which each have respective conduction types that are one of identical or different.

2. The method of manufacturing a semiconductor element according to claim 1, wherein the dopant is at least one material selected from the group consisting of lithium, sulfur, selenium, and hydrogen.

3. The method of manufacturing a semiconductor element claim 2, wherein the semiconductor is a wafer, and wherein the method further comprises, prior to irradiating, affixing the wafer to a stage of an electrostatic chuck during laser irradiation.

4. The method of manufacturing a semiconductor element claim 1, wherein the semiconductor is a wafer, and wherein the method further comprises, prior to irradiating, affixing the wafer to a stage of an electrostatic chuck during laser irradiation.

6. The method of manufacturing a semiconductor element according to claim 2, wherein irradiating the doped layer with laser beams is accomplished (a) with pulsed laser beams from one of the solid-state laser or the excimer laser and (b) with a continuous laser beam from the semiconductor laser.

7. The method of manufacturing a semiconductor element according to claim 6, wherein the semiconductor is a wafer, and wherein the continuous laser beam from the semiconductor laser irradiates a surface of the wafer in its entirety.

8. The method of manufacturing a semiconductor element according to claim 7, wherein the dopant is at least one material selected from the group consisting of lithium, sulfur, selenium, and hydrogen.

9. The method of manufacturing a semiconductor element according to claim 8, wherein the semiconductor is a wafer, and wherein the method further comprises, prior to irradiating, affixing the wafer to a stage of an electrostatic chuck during laser irradiation.

10. The method of manufacturing a semiconductor element according to claim 7, wherein the semiconductor is a wafer, and wherein the method further comprises, prior to irradiating, affixing the wafer to a stage of an electrostatic chuck during laser irradiation.

11. The method of manufacturing a semiconductor element according to claim 6, wherein the dopant is at least one material selected from the group consisting of lithium, sulfur, selenium, and hydrogen.

12. The method of manufacturing a semiconductor element according to claim 11, wherein the semiconductor is a wafer, and wherein the method further comprises, prior to irradiating, affixing the wafer to a stage of an electrostatic chuck during laser irradiation.

13. The method of manufacturing a semiconductor element according to claim 6, wherein the semiconductor is a wafer, and wherein the method further comprises, prior to irradiating, affixing the wafer to a stage of an electrostatic chuck during laser irradiation.

5. A method of manufacturing a semiconductor element, comprising:

implanting ions of a dopant having a large diffusion coefficient into a semiconductor to provide a doped layer; and

irradiating the doped layer with laser beams (a) from one of a solid-state laser or an excimer laser, and (b) from a semiconductor laser to activate the doped layer and provide an activated doped layer that is one of a single doped layer or a plurality of successive doped layers which each have respective conduction types that are one of identical or different.

14. The method of manufacturing a semiconductor element according to claim 5, wherein the dopant is at least one material selected from the group consisting of lithium, sulfur, selenium, and hydrogen.

15. The method of manufacturing a semiconductor element according to claim 14, wherein the semiconductor is a wafer, and wherein the method further comprises, prior to irradiating, affixing the wafer to a stage of an electrostatic chuck during laser irradiation.

16. The method of manufacturing a semiconductor element according to claim 5, wherein the semiconductor is a wafer, and wherein the method further comprises, prior to irradiating, affixing the wafer to a stage of an electrostatic chuck during laser irradiation.