×

METHOD AND SYSTEM FOR DRY ETCHING A METAL NITRIDE

  • US 20080230519A1
  • Filed: 03/23/2007
  • Published: 09/25/2008
  • Est. Priority Date: 03/23/2007
  • Status: Active Grant
First Claim
Patent Images

1. A method of etching a metal containing layer on a substrate, comprising:

  • disposing said substrate having a metal nitride layer in a plasma processing system;

    elevating the temperature of said substrate above approximately 30 degrees C.;

    introducing a process composition comprising a halogen-containing gas and a fluorocarbon gas to said plasma processing system, wherein said fluorocarbon gas comprises the chemical formula CxHyFz, where x and z are equal to unity or greater and y is equal to 0 or greater;

    forming a plasma from said process composition in said plasma processing system; and

    exposing said substrate to said plasma in order to etch said metal nitride layer.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×