POWDERED QUANTUM DOTS

• US 20080230750A1
• Filed: 03/20/2008
• Published: 09/25/2008
• Est. Priority Date: 03/20/2007
• Status: Abandoned Application

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Evident Technologies Incorporated
• Inventors: GILLIES, Jennifer, SOCHA, David, LOCASCIO, Michael
• Application Number:
  US12/052,380
• Publication Number:
  US 20080230750A1
• Time in Patent Office: Days
• US Class Current: 252/500
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: C09K 11/02 Use of particular materials as binders, particle coatings or suspension media therefor
• CPC Class Codes: C09K 11/592 Chalcogenides
• CPC Class Codes: C09K 11/641 Chalcogenides
• CPC Class Codes: H01L 21/02521 Materials
• CPC Class Codes: H01L 21/02601 Nanoparticles fullerenes H10K85/211

Abstract

Powdered quantum dots that can be dispersed into a silicone layer are provided. The powdered quantum dots are a plurality of quantum dot particles, preferably on the micron or nanometer scale. The powdered quantum dots can include quantum dot-dielectric particle complexes or quantum dot-crosslinked silane complexes. The powdered quantum dots can included quantum dot particles coated with a dielectric layer.

Claims

1. A quantum dot particle on the micron or nanometer scale comprising a plurality of quantum dot-dielectric particle complexes, wherein each quantum dot-dielectric particle complex comprises:

a plurality of quantum dots and a dielectric particles on the micron or nanometer scale,

wherein the plurality of quantum dot complexes are absorbed onto the surface of the dielectric particles,

wherein the plurality of quantum dot-dielectric particle complexes form an aggregate on the micron or nanometer scale.

2. The quantum dot particle of claim 1, wherein the quantum dot particle has a diameter between about 20 nanometers and about 100 microns.

3. Powdered quantum dots comprising a plurality of the quantum dot particles of claim 1.

4. The quantum dot particle of claim 1, wherein the dielectric particles are selected from the group consisting of fumed silica, colloidal silica, and alumina nanoxide powder.

5. An optoelectronic devices comprising a composite comprising a plurality of the quantum dot particles of claim 1 dispersed in a silicone material.

6. A photoluminescent device comprising a composite comprising a plurality of the quantum dot particles of claim 1 dispersed in a silicone material.

7. The quantum dot particle of claim 1, wherein the quantum dot comprises a core fabricated from a semiconductor material and a shell at least partially overcoating the core, the shell fabricated from a semiconductor material.

8. The quantum dot particle of claim 1, wherein the quantum dot comprises a core fabricated from a semiconductor material, a metal layer formed on at least a portion of the outer surface of the core, and a shell at least partially overcoating the metal layer, the shell fabricated from a semiconductor material.

9. A method of making a plurality of the quantum dot particles of claim 1 comprising:

(a) providing a dispersion of quantum dots and dielectric nano- or micro-particles in a solvent to form aggregates of a plurality of quantum dot-dielectric particle complexes, each of the plurality of quantum dot-dielectric particle complexes comprising a plurality of quantum dots absorbed onto the surface of a dielectric particle; and

(b) separating the aggregates of the plurality of quantum dot-dielectric particle complexes from the solvent.

10. The method of claim 9, wherein step (b) comprises subjecting the dispersion from step (a) to a solid-liquid separation process to isolate the aggregates.

11. The method of claim 10, further comprising breaking down the aggregates to particles on the nanometer or micron scale.

12. The method of claim 9, wherein step (a) comprises mixing the quantum dots with the dispersion to form the aggregates.

16. The quantum dot particle of claim 1, wherein the silane is 3-amino propyl trimethoxysilane or 3-mercapto propyl trimethoxysilane.

13. A quantum dot particle on the micron or nanometer scale comprising:

a quantum dot-crosslinked silane complex, wherein a plurality of quantum dots are dispersed in a crosslinked silane matrix to form the complex, and wherein the complex is a particle on the micron or nanometer scale.

14. The quantum dot particle of claim 13, wherein the quantum dot particle has a diameter between about 20 nanometers and about 100 microns.

15. Powdered quantum dots comprising a plurality of the quantum dot particles of claim 13.

17. An optoelectronic devices comprising a composite comprising a plurality of the quantum dot particles of claim 13 dispersed in a silicone material.

18. A photoluminescent device comprising a composite comprising a plurality of the quantum dot particles of claim 13 dispersed in a silicone material.

19. A method of making a plurality of the quantum dot particles of claim 13 comprising:

(a) providing quantum dots, each quantum dot having surfactant attached to the outer surface;

(b) displacing the surfactant on the outer surfaces of the quantum dots with a silane, wherein the silane is in a solution;

(c) cross-linking the silane on the quantum dots and the silane in the solution to form a plurality of quantum dot-crosslinked silane complexes, each of the plurality of quantum dot-crosslinked silane complexes comprising a plurality of quantum dots dispersed in a crosslinked silane matrix; and

(d) separating the plurality of quantum dot-crosslinked silane complexes from the solution.

20. The method of claim 19, wherein step (d) comprises subjecting the dispersion from step (c) to a solid-liquid separation process to isolate the quantum dot-crosslinked silane complexes.

21. The method of claim 19, further comprising breaking down the quantum dot-crosslinked silane complexes to particles on the nanometer or micron scale.