SEMICONDUCTOR DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
First Claim
1. A semiconductor device having a protective circuit, the protective circuit comprising:
- a first capacitor electrode formed over a substrate;
a first inorganic insulating film formed over the first capacitor electrode;
an organic resin film formed over the first inorganic insulating film;
an opening formed in the organic resin film;
a second inorganic insulating film formed over the organic resin film and in contact with the first inorganic insulating film in the opening; and
a second capacitor electrode formed over the second inorganic insulating film,wherein the radius of curvature on a surface of the organic resin film is continuously lengthened as the distance from the opening is increased.
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Abstract
A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long, and moisture in the interlayer insulating film is prevented from escaping into a film or electrode adjacent to the interlayer insulating film. A TFT is formed and then a nitrogen-containing inorganic insulating film that transmits less moisture compared to organic resin film is formed so as to cover the TFT. Next, organic resin including photosensitive acrylic resin is applied and an opening is formed by partially exposing the organic resin film to light. The organic resin film where the opening is formed, is then covered with a nitrogen-containing inorganic insulating film which transmits less moisture than organic resin film does. Thereafter, the gate insulating film and the two layers of the nitrogen-containing inorganic insulating films are partially etched away in the opening of the organic resin film to expose the active layer of the TFT.
61 Citations
1 Claim
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1. A semiconductor device having a protective circuit, the protective circuit comprising:
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a first capacitor electrode formed over a substrate; a first inorganic insulating film formed over the first capacitor electrode; an organic resin film formed over the first inorganic insulating film; an opening formed in the organic resin film; a second inorganic insulating film formed over the organic resin film and in contact with the first inorganic insulating film in the opening; and a second capacitor electrode formed over the second inorganic insulating film, wherein the radius of curvature on a surface of the organic resin film is continuously lengthened as the distance from the opening is increased.
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Specification