Antenna device and radio communication device

• US 20080231518A1
• Filed: 12/21/2007
• Published: 09/25/2008
• Est. Priority Date: 12/27/2006
• Status: Active Grant

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Tsutsumi, Yukako, Endo, Mitsuyoshi, Nakao, Mitsuhiro
• Granted Patent: US 7,768,456 B2
• Time in Patent Office: Days
• US Class Current: 343/700MS
• CPC Class Codes: H01L 2223/6611 Wire connections
• CPC Class Codes: H01L 2223/6677 for antenna, e.g. antenna included within housing of semiconductor device antennas per se H01Q
• CPC Class Codes: H01L 2224/05553 being rectangular
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48624 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48644 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48647 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48724 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48744 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48747 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48824 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48844 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48847 : Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/49111 : the connectors connecting two common bonding areas, e.g. Litz or braid wires
• CPC Class Codes: H01L 2224/49113 : the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
• CPC Class Codes: H01L 2224/49171 : Fan-out arrangements
• CPC Class Codes: H01L 2224/85424 : Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/85444 : Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/85447 : Copper (Cu) as principal constituent
• CPC Class Codes: H01L 23/66 : High-frequency adaptations
• CPC Class Codes: H01L 24/06 : of a plurality of bonding areas
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01031 : Gallium [Ga]
• CPC Class Codes: H01L 2924/01032 : Germanium [Ge]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/10271 : Silicon-germanium [SiGe]
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/30111 : matching
• CPC Class Codes: H01Q 1/38 : formed by a conductive layer on an insulating support patch antennas H01Q9/0407; microstrip dipole antennas H01Q9/065; microstrip slot antennas H01Q13/106; transmission line microstrip antennas H01Q13/206; manufacturing reflecting surfaces using insulating material for supporting the reflecting surface H01Q15/142

Abstract

First and second wires are formed so that the further away from a semiconductor chip, the greater the distance between the first and second wires. This prevents currents flowing through the first and second wires from cancelling out each other, and further enables a metallic plate to be disposed as far away from the semiconductor chip as possible. In addition, configuring the metallic plate to have a constant width that is wider than the diameters of the first and second wires results in a wide connection range, thereby ensuring connection even when mounting misalignments occur between the wires and the metallic plate.

Claims

1. An antenna device comprising:

a dielectric substrate;

a semiconductor chip disposed on the dielectric

a metallic plate having a band-like shape with a constant width and having a constant width that is wider than diameters of the first and second wires, formed on the dielectric substrate so as to be approximately parallel to at least one side of the semiconductor chip;

first and second feeders formed on the semiconductor chip;

a first wire having first and second ends, the first end being connected with the first feeder and the second end being connected with the metallic plate; and

a second wire having third and fourth ends, the third end being connected with the second feeder and the fourth end being connected the metallic plate, wherein

a distance L1 between the first end of the first wire and the third end of the second wire is smaller than a distance L2 between the second end of the first wire and the fourth end of the second wire (L1<

L2).

2. The device according to claim 1, further comprising:

a parasitic metal element provided on the dielectric substrate and disposed on a side opposite to the side on which the semiconductor chip is formed with respect to the metallic plate.

3. The device according to claim 1, further comprising:

a parasitic metal element provided on the dielectric substrate and disposed between the metallic plate and the semiconductor chip.

4. The device according to claim 2, wherein

an open end of the parasitic metal element is bent in a direction in which the metallic plate is disposed.

5. The device according to claim 3, wherein

an open end of the parasitic metal element is bent in a direction in which the metallic plate is disposed.

6. The device according to claim 1, wherein

a length of a pathway from a connection of the first wire and the first feeder to a connection of the second wire and the second feeder and which includes the first and second wires and the metallic plate is approximately equivalent to one operating frequency wavelength.

7. The device according to claim 1, further comprising:

a differential circuit formed on the semiconductor chip and connected to differential feeders as the first and second feeder,

a sealant formed so as to cover the dielectric substrate and the semiconductor chip; and

solder balls formed under the dielectric substrate.

8. A radio communication device configured to perform data communication via the antenna device according to claim 1.

9. An antenna device comprising:

a dielectric substrate;

a semiconductor chip disposed on the dielectric substrate;

first and second metallic plates formed on the dielectric substrate;

first and second feeders formed on the semiconductor chip; and

a first wire configured to connect the first metallic plate and the first feeder, and a second wire configured to connect the second metallic plate and the second feeder, wherein

a distance L1 between connections of the first and second wires and the first and second feeders and a distance L2 between connections of the first and second wires and the first and second metallic plates has a relationship of L1<

L2, and

the first and second metallic plates include;

first and second metal parts respectively formed so as to include respective connections with the first and second wires, and which are also respectively formed so that areas thereof are wider than cross-sectional areas of the first and second wires, and

a third metal part, having a width that is narrower than the first and second metal parts, and formed so as to extend from the first and second metal parts in approximately a vertical direction with respect to the semiconductor chip and which are also formed so as to electrically connect the first and second metal parts each other.

10. The device according to claim 9, further comprising:

a parasitic metal element provided on the dielectric substrate and disposed on a side opposite to the side on which the semiconductor chip is formed with respect to the metallic plates.

11. The device according to claim 9, further comprising:

a parasitic metal element provided on the dielectric substrate and disposed between the metallic plates and the semiconductor chip.

12. The device according to claim 10, wherein

an open end of the parasitic metal element is bent in a direction in which the metallic plates is disposed.

13. The device according to claim 11, wherein

an open end of the parasitic metal element is bent in a direction in which the metallic plates is disposed.

14. The device according to claim 9, wherein

a length of a pathway from a connection of the first wire and the first feeder to a connection of the second wire and the second feeder and which includes the first and second wires and the metallic plates is approximately equivalent to one operating frequency wavelength.

15. The device according to claim 9, further comprising:

a differential circuit formed on the semiconductor chip and connected to differential feeders as the first and second feeder,

a sealant formed so as to cover the dielectric substrate and the semiconductor chip; and

solder balls formed under the dielectric substrate.

16. A radio communication device configured to perform data communication via the antenna device according to claim 9.