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ACTIVE MATRIX OF AN ORGANIC LIGHT-EMITTING DIODE DISPLAY SCREEN

  • US 20080231556A1
  • Filed: 03/17/2008
  • Published: 09/25/2008
  • Est. Priority Date: 03/16/2007
  • Status: Active Grant
First Claim
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1. Active matrix for an organic light-emitting diode display screen, comprising pixels arranged in rows and in columns, each comprising a pixel electrode capable of accommodating an organic light-emitting diode on the surface and first and second current drivers connected to said pixel electrode, each first driver and each second driver comprising a current control transistor connected between a supply voltage Vdd and said pixel electrode and at least a first switching transistor for controlling the gate of said current control transistor, said first switching transistor being connected between a column data line of the matrix and the gate of said current control transistor, and having its gate connected to a row select line of the matrix, the source or drain electrodes of the switching and control transistors and the pixel electrodes being produced on a source-drain metal level, and the gate electrodes of these transistors each being produced by a row select line of the matrix, on a gate metal level, wherein:

  • each pixel is placed between two row select lines of the matrix, with a driver placed between a first of these two row select lines and its pixel electrode, said first row select line forming the gate of the first switching transistor of this driver and the other driver placed between a second of these two row select lines and the pixel electrode, said second row select line forming the gate of the first switching transistor of this driver;

    a source-drain electrode of the control transistors is formed by a supply bus Vdd produced on the source-drain metal level, and the other source-drain electrode of the control transistors is formed by at least one finger, which is an excrescence of the pixel electrode on the same source-drain metal level; and

    each column data line is placed between two columns of pixels of the matrix and formed by using said source-drain metal level and said gate metal level, said gate metal level being used along the pixel electrodes and said source-drain metal level being used in the zones between said pixel electrodes where the switching transistors of said drivers are produced.

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