METHOD AND APPARATUS FOR INSPECTING PATTERN DEFECTS
First Claim
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1. An apparatus for inspecting pattern defects, the apparatus comprising:
- a defect candidate extraction unit configured to perform a defect candidate extraction process by comparing a detected image signal with a reference image signal; and
a defect detection unit configured to perform a defect detection process and a defect classification process based on a partial image containing a defect candidate that is extracted by said defect candidate extraction unit,wherein the processes performed by said defect candidate extraction unit and/or said defect detection unit are performed asynchronously with an image acquisition process.
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Abstract
An apparatus for inspecting pattern defects, the apparatus including: a defect candidate extraction unit configured to perform a defect candidate extraction process by comparing a detected image signal with a reference image signal; and a defect detection unit configured to perform a defect detection process and a defect classification process based on a partial image containing a defect candidate that is extracted by the defect candidate extraction unit, wherein the processes performed by the defect candidate extraction unit and/or the defect detection unit are performed asynchronously with an image acquisition process.
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1 Claim
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1. An apparatus for inspecting pattern defects, the apparatus comprising:
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a defect candidate extraction unit configured to perform a defect candidate extraction process by comparing a detected image signal with a reference image signal; and a defect detection unit configured to perform a defect detection process and a defect classification process based on a partial image containing a defect candidate that is extracted by said defect candidate extraction unit, wherein the processes performed by said defect candidate extraction unit and/or said defect detection unit are performed asynchronously with an image acquisition process.
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Specification
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Current AssigneeHitachi High-Tech Company Limited (Hitachi, Ltd.)
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Original AssigneeKaoru Sakai, Shunji Maeda, Takafumi Okabe
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InventorsSakai, Kaoru, Okabe, Takafumi, Maeda, Shunji
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Granted Patent
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Time in Patent OfficeDays
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Field of Search
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US Class Current382/149
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CPC Class CodesG01N 21/9501 Semiconductor wafers manufa...G01N 21/95607 using a comparative methodG06T 2207/30148 Semiconductor; IC; WaferG06T 7/001 using an image reference ap...
