METHOD FOR REMOVING MATERIAL FROM A SEMICONDUCTOR
First Claim
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1. A method for removing a material from a trench in a semiconductor, comprising:
- placing the semiconductor in a vacuum chamber;
admitting a reactant into the chamber at a pressure sufficient to form a film of the reactant on a surface of the material;
controlling the composition and residence time of the film on the surface of the material to etch a predetermined portion of the material; and
removing any unwanted reactant and reactant products from the chamber or surface of the material.
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Abstract
A method for removing a material from a trench in a semiconductor. The method includes placing the semiconductor in a vacuum chamber, admitting a reactant into the chamber at a pressure to form a film of the reactant on a surface of the material, controlling the composition and residence time of the film on the surface of the material to etch at least a portion of the material, and removing any unwanted reactant and reaction product from the chamber or the surface of the material.
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Citations
26 Claims
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1. A method for removing a material from a trench in a semiconductor, comprising:
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placing the semiconductor in a vacuum chamber; admitting a reactant into the chamber at a pressure sufficient to form a film of the reactant on a surface of the material; controlling the composition and residence time of the film on the surface of the material to etch a predetermined portion of the material; and removing any unwanted reactant and reactant products from the chamber or surface of the material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 26)
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19. A method of creating an isolation structure in a semiconductor substrate, comprising:
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providing a semiconductor substrate having a trench, wherein the trench includes a bottom surface, an open top, and a side surface that extends from the bottom surface to the top; forming a liner along the bottom surface and the side surface of the trench; filling the trench with a dielectric material; removing the dielectric material from a portion of the side surface of the trench adjacent the opening while leaving most of the dielectric material in the trench so as to expose the liner on the portion of the side surfaces by; placing the semiconductor substrate in a vacuum chamber; admitting reactant containing gas into the chamber at a sufficient pressure so as to form a film of the reactant on a surface of the dielectric material; and controlling the composition and residence time of the film on the surface of the dielectric material so as to etch an accurate amount of the dielectric material on the substrate; and removing any unwanted reactant and reaction products from the chamber or surface of the substrate; depositing an oxide over the trench to a level above the opening of the trench; and recessing the oxide down to the level of the opening of the trench. - View Dependent Claims (20, 21, 22, 23, 24, 25)
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Specification