HIGH SELECTIVITY BPSG TO TEOS ETCHANT

• US 20080233759A1
• Filed: 05/01/2008
• Published: 09/25/2008
• Est. Priority Date: 04/07/1998
• Status: Active Grant

• Current Assignee: Round Rock Research LLC
• Original Assignee: Micron Technology, Inc.
• Inventors: Torek, Kevin J., Lee, Whonchee
• Granted Patent: US 7,977,251 B2
• Time in Patent Office: Days
• US Class Current: 438/745
• CPC Class Codes: C03C 15/00 Surface treatment of glass, not in the form of fibres or filaments, by etching etching or surface-brightening compositions, in general C09K13/00
• CPC Class Codes: H01L 21/31111 by chemical means

Abstract

Methods of selectively etching BPSG over TEOS are disclosed. In one embodiment, a TEOS layer may be used to prevent contamination of other components in a semiconductor device by the boron and phosphorous in a layer of BPSG deposited over the TEOS layer. An etchant of the present invention may be used to etch desired areas in the BPSG layer, wherein the high selectivity for BPSG to TEOS of etchant would result in the TEOS layer acting as an etch stop. A second etchant may be utilized to etch the TEOS layer. The second etchant may be less aggressive and, thus, not damage the components underlying the TEOS layer.

Claims

1. A method of forming an opening in a semiconductor device having a first barrier layer and a second barrier layer thereover, the method comprising:

etching the second barrier layer with a first etchant selective to the second barrier layer over the first barrier layer, the first etchant comprising a fluoride-containing solution and an organic acid selected from the group consisting of oxalic acid and formic acid to form a via in the second barrier layer having substantially vertical sidewalls and to expose the first barrier layer; and

forming an opening extending from a lowermost portion of the first barrier layer to an uppermost portion of the second barrier layer by applying a second etchant to the via.

2. The method of claim 1, wherein etching the second barrier layer further comprises patterning a mask on the second barrier layer.

3. The method of claim 2, further comprising forming the mask comprising a nitride.

4. The method of claim 1, further comprising forming the first barrier layer to comprise tetraethyl orthosilicate.

5. The method of claim 1, further comprising forming the second barrier layer to comprise borophosphosilicate glass.

6. The method of claim 1, further comprising selecting the second etchant from the group consisting of TMAH/HF and an ammonium fluoride/phosphoric acid solution in water.

7. The method of claim 1, further comprising formulating the organic acid to comprise formic acid and formulating the fluoride-containing solution to comprise about 40% ammonium fluoride acid by weight in water.

8. The method of claim 1, wherein the first etchant exhibits a selectivity ratio of second barrier layer to first barrier layer between about 27:

1 and 55;

1.

9. A method of selectively etching a barrier layer on a semiconductor device, the method comprising:

contacting a semiconductor device having a barrier layer overlying tetraethyl orthosilicate with a first solution comprising a fluoride-containing solution and an organic acid selected from the group consisting of oxalic acid and formic acid to form a partial opening having substantially vertical sidewalls extending from an upper portion of the tetraethyl orthosilicate to an upper portion of the barrier layer; and

etching the tetraethyl orthosilicate with a second solution to form a full opening having substantially vertical sidewalls extending from a lower portion of the tetraethyl orthosilicate to the upper portion of the barrier layer.

10. The method of claim 9, further comprising forming the barrier layer to comprise borophosphosilicate glass.

11. The method of claim 10, further comprising formulating the organic acid to comprise formic acid and the fluoride-containing solution to comprise hydrofluoric acid.

12. The method of claim 11, further comprising formulating the first solution to include formic acid in a volumetric ratio with hydrofluoric acid at about 1:

1 to about 500;

1.

13. The method of claim 9, further comprising formulating the first solution to include formic acid and about 40% ammonium fluoride acid by weight in water.

14. The method of claim 9, wherein the solution exhibits a selectivity ratio of the barrier layer to tetraethyl orthosilicate between about 27:

1 and 55;

1.