Rf Mems Switch With a Flexible and Free Switch Membrane

• US 20080237024A1
• Filed: 03/07/2006
• Published: 10/02/2008
• Est. Priority Date: 03/21/2005
• Status: Active Grant

• Current Assignee: DelfMEMS Co.
• Original Assignee: DelfMEMS Co.
• Inventors: Millet, Olivier
• Granted Patent: US 7,834,722 B2
• Time in Patent Office: Days
• US Class Current: 200/600
• CPC Class Codes: B81B 2201/018 Switches not provided for in B81B2201/014 - B81B2201/016
• CPC Class Codes: B81B 5/00 Devices comprising elements which are movable in relation to each other, e.g. comprising slidable or rotatable elements
• CPC Class Codes: H01H 1/0036 Switches making use of microelectromechanical systems [MEMS] for electromagnetic relays H01H50/005; for electrostatic relays H01H59/0009
• CPC Class Codes: H01H 2001/0063 having electrostatic latches, i.e. the activated position is kept by electrostatic forces other than the activation force
• CPC Class Codes: H01H 59/0009 making use of micromechanics

Abstract

The RF MEMS switch comprising micromechanical switching means that are carried by a substrate (1) and that can be actuated between two positions: a first position (off-state/FIG. 1) and a second position (on-state), and actuation means for actuating the position of the switching means. The micromechanical switching means comprise a flexible membrane (6) which is freely supported by support means (3), which is bendable under the action of the actuation means (7), and which can freely slide relatively to the support means (3) during its bending movement.

Claims

1. RF MEMS switch comprising micromechanical switching means that can be actuated between two positions:

a first position (off-state) and a second position (on-state), and actuation means for actuating the position of the switching means, wherein the micromechanical switching means comprise a flexible membrane which is freely supported by support means, which is bendable under the action of the actuation means, and which can freely slide relatively to the support means during its bending movement.

2. The RF MEMS switch of claim 1 wherein the flexible membrane is at rest in one of the two first and second positions, and preferably in the first position (off-state) wherein the switch is opened.

3. The RF MEMS switch of claim 2 further comprising electrostatic means for maintaining the membrane in its rest position.

4. The RF MEMS switch of claim 1 wherein the membrane forms a capacitive switch element.

5. The capacitive RF MEMS switch of claim 4 wherein a first dielectric layer is deposited on a surface of a substrate, wherein it further comprises two metallic supporting members that form a coplanar wave guide with the first dielectric layer, and wherein the membrane is freely supported by the said two metallic supporting members.

6. The capacitive RF MEMS switch of claim 5 wherein each supporting member comprises a passage through which the switch membrane is freely positioned, and the membrane comprises at both extremities two over-dimensioned parts for fastening the membrane to the supporting members, but without hindering the membrane from freely sliding relatively to the supporting members during the switching movements of the membrane.

7. The capacitive RF MEMS switch of claim 5 further comprising a third metallic supporting member, that is positioned between the two metallic supporting members, and that is used as signal line for the RF signal, and wherein at least one second dielectric layer is interposed between the membrane and the third metallic supporting member.

8. The capacitive RF MEMS switch of claim 7 wherein the second dielectric layer is carried by the third metallic supporting member.

9. The capacitive RF MEMS switch of claim 2 wherein the membrane is in contact with the second dielectric layer when the membrane is at rest.

10. The RF MEMS switch of claim 1 wherein the actuation means are electrostatic means.

11. The capacitive RF MEMS switch of claim 5 wherein the actuation means are electrostatic means that comprise two electrodes for bending the membrane away from the substrate, and wherein the two electrodes are positioned on the substrate outside the coplanar wave guide.

12. The capacitive RF MEMS switch of claim 6 further comprising a third metallic supporting member, that is positioned between the two metallic supporting members, and that is used as signal line for the RF signal, and wherein at least one second dielectric layer is interposed between the membrane and the third metallic supporting member.

13. The capacitive RF MEMS switch of claim 8 wherein the membrane is in contact with the second dielectric layer when the membrane is at rest.