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FORMING A TYPE I HETEROSTRUCTURE IN A GROUP IV SEMICONDUCTOR

  • US 20080237572A1
  • Filed: 03/27/2007
  • Published: 10/02/2008
  • Est. Priority Date: 03/27/2007
  • Status: Active Grant
First Claim
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1. An apparatus comprising:

  • a silicon (Si) substrate;

    a first buffer layer formed of silicon germanium tin (SiGe(Sn)) on the Si substrate;

    a barrier layer on the first buffer layer, the barrier layer comprising silicon germanium (Si1-xGex); and

    a quantum well (QW) layer including;

    a lower QW barrier layer on the barrier layer, the lower QW barrier layer formed of silicon germanium carbon (Si1-yGey(C));

    a strained QW channel layer formed of germanium on the lower QW layer; and

    an upper QW barrier layer on the strained QW channel layer formed of Si1-zGez(C).

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