Organic Component and Electric Circuit Comprising Said Component

• US 20080237584A1
• Filed: 09/05/2006
• Published: 10/02/2008
• Est. Priority Date: 09/06/2005
• Status: Abandoned Application

• Current Assignee: PolyIC GmbH & Co. KG (Leonhard KURZ Stiftung & Company KG)
• Original Assignee: PolyIC GmbH & Co. KG (Leonhard KURZ Stiftung & Company KG)
• Inventors: Fix, Walter, Ullmann, Andreas
• Application Number:
  US12/065,757
• Publication Number:
  US 20080237584A1
• Time in Patent Office: Days
• US Class Current: 257/40
• CPC Class Codes: H10K 10/00 Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers integrated devices or assemblies of multiple devices H10K19/00
• CPC Class Codes: H10K 19/10 comprising field-effect transistors
• CPC Class Codes: H10K 85/113 Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
• CPC Class Codes: H10K 85/615 Polycyclic condensed aromatic hydrocarbons, e.g. anthracene

Abstract

The invention relates to an organic component and an electric circuit containing at least one organic component of this type, comprising the following layers:

• • a first electrode layer composed of a first electrically conductive material,
  • a second electrode layer composed of a second electrically conductive material,
  • an organic semiconductor layer, and
  • at least one insulator layer composed of a dielectric material; wherein
  • a) the first electrode layer and the second electrode layer are arranged in the same plane alongside one another at a distance A,
  • b) the organic semiconductor layer at least partly covers the first electrode layer and the second electrode layer and furthermore spans the distance A, and wherein
  • c) a first insulator layer covers the organic semi-conductor layer on its side remote from the two electrode layers.

Claims

1. An organic actuator component for a logic gate, comprising:

a first electrode layer comprising a first electrically conductive material;

a second electrode layer comprising a second electrically conductive material;

an organic semiconductor layer on at least the first and second electrodes; and

at least one insulator layer composed of a dielectric material;

wherein

(a) the first electrode layer and the second electrode layer are coplanar alongside one another at a spaced apart distance A, wherein the distance A is within the range of 1 μ

m to 100 μ

;

(b) the organic semiconductor layer at least partly covers the first electrode layer and at least partly covers the second electrode layer in a continuous layer spanning the distance A; and

wherein

(c) a first insulator layer covers the organic semiconductor layer on its side remote from the two electrode layers.

2. The organic component as claimed in claim 1 including a second insulator layer wherein the organic semiconductor layer covers and is contiguous with the second insulator layer in the region of the distance A between the first and the second electrode layers.

3. The organic component as claimed in claim 2 wherein the second insulator layer covers that side of the two electrode layers which is remote from the organic semiconductor layer.

4. The organic component as claimed in claim 3 wherein the second insulator layer forms a flexible mechanical carrier.

5. The organic component as claimed in claim 1 wherein the electrode layers each have a layer thickness in the range of 1 nm to 1 μ

m.

6. The organic component as claimed in claim 1 wherein the first and the second electrodes are formed from at least one of metal, a metal alloy, a conductive polymer, a conductive adhesive, a conductive substance with conductive inorganic particles in a polymer matrix or from a paste/ink containing electrically conductive particles.

7. The organic component as claimed in claim 1 wherein the electrode layers each comprise multilayers.

8. The organic component as claimed in claim 1 wherein the electrode layers comprise at least one of a plurality of metal layers, a plurality of polymer layers or a plurality of paste/ink layers.

9. The organic component as claimed in claim 1 wherein the organic semiconductor layer has a layer thickness within the range of 1 nm to 10 μ

m.

10. The organic component as claimed in claim 1 wherein the organic semiconductor layer has a layer thickness within the range of 1 nm to 200 nm.

11. The organic component as claimed in claim 1 wherein the first insulator layer has a layer thickness within the range of 1 nm to 10 μ

m.

12. The organic component as claimed in claim 2 wherein the second insulator layer has a layer thickness of at least 1 μ

m.

13. The organic component as claimed in claim 1 wherein the organic semiconductor layer is formed from polythiophene, polyterthrophene, polyfluorene, pentacene, tetracene, oligothrophene, inorganic silicon embedded in a polymer matrix, nanosilicon or polyarylamine.

14. The organic component as claimed in claim 1 wherein the first insulator layer is an organic polymer.

15. The organic component as claimed in claim 14 wherein the organic polymer layer is formed from polymethyl methacrylate (PMMA), PVP, PHS, PS, polystyrene copolymers, urea resins or PMMA copolymers.

16. A method for producing the organic component as claimed in claim 1 comprising forming the at least the organic semiconductor layer from a liquid.

17. The method as claimed in claim 16 including printing at least the organic semiconductor layer from the liquid.

18. The organic component of claim 1 further including a logic gate electric circuit coupled to said electrodes.

19. The organic component as claimed in claim 18 wherein the logic gate electric circuit includes at least one driver component and at least one load component, wherein the at least one driver component is provided by a transistor and the at least one load component is provided by the organic component of claim 1.

20. The organic component as claimed in claim 19 wherein the transistor includes a semiconductor layer.

21. The organic component as claimed in claim 19 wherein the transistor comprises an organic field effect transistor (OFET) including a semiconductor layer.

22. The organic component as claimed in claim 18 wherein the logic gate comprises one of an inverter, a logic NOR, a logic NAND or a ring oscillator.

23. The organic component as claimed in claim 22 wherein the logic gate comprises the inverter and comprises at least one p-conducting OFET and at least one organic component as claimed in claim 1.

24. The organic component as claimed in claim 22 wherein the logic circuit comprises the logic NOR and includes two parallel-connected p-conducting OFETs and one organic component as claimed in claim 1.

25. The organic component as claimed in claim 22 wherein the logic circuit comprises the logic NAND which comprises two series-connected p-conducting OFETs and one organic component as claimed in claim 1.

26. The organic component as claimed in claim 22 wherein the logic circuit comprises the ring oscillator, which oscillator comprises an odd number n of said inverter wherein an output of a first inverter I₁ is connected to an input of a further inverter I₂, and wherein a last inverter I_n is connected to the first inverter I₁ for forming the ring oscillator.

27. A method for producing the organic component as claimed in claim 20 wherein the organic semiconductor layer of the organic component is formed simultaneously and in one work operation with the semiconductor layer of the transistor.

28. The organic component of claim 1 further including a logic circuit, the organic component of claim 1 being connected in circuit with the logic circuit and forming load component for the logic circuit.