Thin film transistor
First Claim
1. A thin film transistor, comprising:
- an insulating substrate;
a gate electrode, a gate insulating layer and a semiconductor layer including an oxide formed over said insulating substrate,said gate insulating layer further comprising;
a lower gate insulating layer in contact with said insulating substrate and including an oxide having any one of the elements In, Zn or Ga; and
an upper gate insulating layer provided on said lower gate insulating layer, said upper gate insulating layer having at least one layer; and
a source electrode and a drain electrode formed on said semiconductor layer.
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Accused Products
Abstract
One embodiment of the present invention is a thin film transistor, including: an insulating substrate; a gate electrode, a gate insulating layer and a semiconductor layer including an oxide, these three elements being formed over the insulating substrate in this order, and the gate insulating layer including: a lower gate insulating layer, the lower gate insulating layer being in contact with the insulating substrate and being an oxide including any one of the elements In, Zn or Ga; and an upper gate insulating layer provided on the lower gate insulating layer, the upper gate insulating layer comprising at least one layer; and a source electrode and a drain electrode formed on the semiconductor layer.
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Citations
14 Claims
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1. A thin film transistor, comprising:
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an insulating substrate; a gate electrode, a gate insulating layer and a semiconductor layer including an oxide formed over said insulating substrate, said gate insulating layer further comprising; a lower gate insulating layer in contact with said insulating substrate and including an oxide having any one of the elements In, Zn or Ga; and an upper gate insulating layer provided on said lower gate insulating layer, said upper gate insulating layer having at least one layer; and a source electrode and a drain electrode formed on said semiconductor layer. - View Dependent Claims (3, 5, 7, 9, 11, 13)
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2. A thin film transistor, comprising:
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an insulating substrate; a gate electrode and a gate insulating layer formed over said insulating substrate, said gate insulating layer comprising; a lower gate insulating layer in contact with said insulating substrate and including an oxide having any one of the elements In, Zn or Ga; and an upper gate insulating layer provided on said lower gate insulating layer, said upper gate insulating layer having at least one layer; a source electrode and a drain electrode formed on said gate insulator; and a semiconductor layer including an oxide, said semiconductor layer being formed at least on said gate insulating layer between said source electrode and said drain electrode. - View Dependent Claims (4, 6, 8, 10, 12, 14)
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Specification