Group III-V Semiconductor device and method for producing the same
First Claim
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9-1. A semiconductor device as described in claim 1, which has a top surface having thereon, at least in the vicinity of the side surface, an insulating film formed of a dielectric material.
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Abstract
A Group III-V semiconductor device bonded to a conductive support substrate, which device has a side surface whose surface layer has a high-resistance region formed through ion implantation.
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Citations
24 Claims
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9-1. A semiconductor device as described in claim 1, which has a top surface having thereon, at least in the vicinity of the side surface, an insulating film formed of a dielectric material.
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13. A method for producing a Group III-V semiconductor device, the method comprising:
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forming, on a base, a plurality of semiconductor devices isolated from one another; forming, through ion implantation, a high-resistance region in a surface layer of a side surface of each semiconductor device; after formation of the high-resistance region, forming a p-electrode and a low-melting-point metal diffusion prevention layer on the top surface of the semiconductor device; bonding the semiconductor device to a conductive support substrate via a low-melting-point metal layer; and removing the base through the laser lift-off process. - View Dependent Claims (14, 15, 16, 17, 18, 20, 22, 23, 24)
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19. A method for producing a Group III-V semiconductor device, the method comprising:
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forming a Group III-V semiconductor layer on a base; forming a high-resistance region in a surface layer of a predetermined portion of the top surface of the semiconductor layer through ion implantation at an acceleration voltage which allows the implanted ions to reach the base; dividing the semiconductor layer, through the high-resistance region, into semiconductor devices isolated from one another; after formation of the high-resistance region, forming a p-electrode and a low-melting-point metal diffusion prevention layer on the top surface of each semiconductor device; bonding the semiconductor device to a conductive support substrate via a low-melting-point metal layer; and removing the base through the laser lift-off process.
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21. A method for producing a Group III-V semiconductor device, the method comprising:
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forming a Group III-V semiconductor layer on a base; forming a first high-resistance region in a surface layer of a predetermined portion of the top surface of the semiconductor layer through ion implantation at an acceleration voltage which does not allow the implanted ions to reach the base; after formation of the first high-resistance region, forming a p-electrode and a low-melting-point metal diffusion prevention layer on the top surface of the semiconductor layer; bonding the semiconductor device to a conductive support substrate via a low-melting-point metal layer; removing the base through the laser lift-off process; and forming, in addition to the first high-resistance region, a second high-resistance region in a surface layer of a predetermined portion of the surface of the semiconductor layer which surface has previously bonded to the base, the portion corresponding to the first high-resistance region, through ion implantation at an acceleration voltage which allows the implanted ions to reach the first high-resistance region; and dividing the semiconductor layer, through the first and second high-resistance regions, into semiconductor devices isolated from one another.
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Specification