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Group III-V Semiconductor device and method for producing the same

  • US 20080237629A1
  • Filed: 03/14/2008
  • Published: 10/02/2008
  • Est. Priority Date: 03/16/2007
  • Status: Abandoned Application
First Claim
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9-1. A semiconductor device as described in claim 1, which has a top surface having thereon, at least in the vicinity of the side surface, an insulating film formed of a dielectric material.

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