×

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

  • US 20080237713A1
  • Filed: 02/29/2008
  • Published: 10/02/2008
  • Est. Priority Date: 03/30/2007
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor device comprising:

  • a semiconductor layer on an insulating layer, the semiconductor layer surrounded by a device isolating layer;

    a gate insulating film on the semiconductor layer;

    a gate electrode having comb-like shape on the gate insulating film, the gate electrode including a base portion extending in a first direction and a plurality of tooth portions extending in a second direction from one side surface of the base portion;

    a diffusion layer of first conductivity type having comb-like shape in the semiconductor layer under the gate electrode, the gate insulating film sandwiched between the diffusion layer and the gate electrode;

    a source layer of second conductivity type and having high impurity concentration in the semiconductor layer on a tooth portion side of the base portion of the gate electrode, the second conductivity type opposite the first conductivity type;

    a drain layer of the second conductivity type and having high impurity concentration in the semiconductor layer on a side of the base portion of the gate electrode opposite the tooth portion side,the first and second directions respectively corresponding to a gate width direction and a gate length direction of the gate electrode; and

    an extraction layer of the first conductivity type in the semiconductor layer between the source layer and the device isolating layer, the extraction layer having a high impurity concentration greater than an impurity concentration of the diffusion layer and connected with the diffusion layer below the tooth portions of the gate electrode.

View all claims
  • 3 Assignments
Timeline View
Assignment View
    ×
    ×