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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

  • US 20080237875A1
  • Filed: 03/12/2008
  • Published: 10/02/2008
  • Est. Priority Date: 03/26/2007
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a semiconductor layer formed over an insulating surface;

    a first insulating layer formed over the semiconductor layer;

    a gate electrode formed over the first insulating layer;

    a second insulating layer formed over the gate electrode; and

    a conductive layer formed over the second insulating layer,wherein the conductive layer is connected to the semiconductor layer via a first opening and second opening,wherein the first opening is formed at least in the second insulating layer,wherein the first opening reaches the semiconductor layer,wherein the second opening is formed at least in the semiconductor layer,wherein the second opening reaches the insulating surface, andwherein a top-view area of the second opening is smaller than that of the first opening.

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