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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

  • US 20080237876A1
  • Filed: 03/12/2008
  • Published: 10/02/2008
  • Est. Priority Date: 03/26/2007
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a semiconductor layer formed over a substrate;

    a first insulating layer formed over the semiconductor layer;

    a gate electrode formed over the first insulating layer;

    a second insulating layer formed over the gate electrode;

    an opening which reaches the semiconductor layer and is formed at least in the first insulating layer and the second insulating layer;

    a step portion formed at a side surface of the second insulating layer in the opening; and

    a conductive layer which is formed over the second insulating layer, covers a side surface of the opening, and is in contact with the semiconductor layer.

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