Semiconductor Device and Wiring Board
First Claim
1. A semiconductor device characterized by comprising:
- a wiring board comprising a plurality of connecting terminals arranged on one surface in a direction of thickness and a plurality of external connecting bumps arranged on the other surface in the direction of thickness; and
a semiconductor chip connected to said connecting terminals on said wiring board by flip chip bonding,wherein said wiring board comprises;
a first wiring portion comprising a plurality of wiring layers and said external connecting bumps; and
at least one second wiring portion integrated with said first wiring portion on said first wiring portion,said connecting terminals are made of contact plugs formed in through holes extending through said second wiring portion in the direction of thickness,one end of said contact plug is in direct contact with one of said wiring layers,a size of a surface of said second wiring portion on a side of said first wiring portion is smaller than a size of a surface of said first wiring portion on a side of said second wiring portion, anda thermal expansion coefficient of said second wiring portion is smaller than a thermal expansion coefficient of said first wiring portion and equal to a thermal expansion coefficient of said semiconductor chip.
7 Assignments
0 Petitions
Accused Products
Abstract
A wiring board (20A) includes a first wiring portion (10A) having a plurality of wiring layers (1) and external connecting bumps (5), and at least one second wiring portion (15A) having a plurality of contact plugs (14). The second wiring portion is integrated with the first wiring portion such that each terminal (14a) of the second wiring portion is in direct contact with one of the wiring layers of the first wiring portion. Hence, there is no risk to produce an internal stress caused by the diffused component of the solder bump in the junction portion between the second and first wiring portions. Accordingly, even when a semiconductor chip (30) of a low-k material is highly integrated on the wiring board, a highly reliable semiconductor device (50) can be obtained.
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Citations
23 Claims
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1. A semiconductor device characterized by comprising:
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a wiring board comprising a plurality of connecting terminals arranged on one surface in a direction of thickness and a plurality of external connecting bumps arranged on the other surface in the direction of thickness; and a semiconductor chip connected to said connecting terminals on said wiring board by flip chip bonding, wherein said wiring board comprises; a first wiring portion comprising a plurality of wiring layers and said external connecting bumps; and at least one second wiring portion integrated with said first wiring portion on said first wiring portion, said connecting terminals are made of contact plugs formed in through holes extending through said second wiring portion in the direction of thickness, one end of said contact plug is in direct contact with one of said wiring layers, a size of a surface of said second wiring portion on a side of said first wiring portion is smaller than a size of a surface of said first wiring portion on a side of said second wiring portion, and a thermal expansion coefficient of said second wiring portion is smaller than a thermal expansion coefficient of said first wiring portion and equal to a thermal expansion coefficient of said semiconductor chip. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A wiring board characterized by comprising:
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a first wiring portion comprising a plurality of wiring layers and a plurality of external connecting bumps; and at least one second wiring portion comprising a plurality of connecting terminals configured to mount a semiconductor chip by flip chip bonding, wherein said second wiring portion is integrated with said first wiring portion on said first wiring portion, said connecting terminals are made of contact plugs formed in through holes extending through said second wiring portion in the direction of thickness, one end of said contact plug is in direct contact with one of said wiring layers, a size of a surface of said second wiring portion on a side of said first wiring portion is smaller than a size of a surface of said first wiring portion on a side of said second wiring portion, and a thermal expansion coefficient of said second wiring portion is smaller than a thermal expansion coefficient of said first wiring portion and equal to a thermal expansion coefficient of said semiconductor chip. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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Specification