CAPACITOR STRUCTURE

• US 20080239619A1
• Filed: 03/27/2008
• Published: 10/02/2008
• Est. Priority Date: 03/29/2007
• Status: Active Grant

• Current Assignee: Collabo Innovations, Inc. (Wi-LAN Inc.)
• Original Assignee: Panasonic Corporation (Panasonic Holdings Corporation)
• Inventors: Adachi, Kazuki, Sugioka, Tetsurou, OKAMOTO, Kiyomi
• Granted Patent: US 7,838,919 B2
• Time in Patent Office: Days
• US Class Current: 361/303
• CPC Class Codes: H01G 4/005 Electrodes
• CPC Class Codes: H01G 4/33 Thin- or thick-film capacitors thin- or thick-film circuits H01L27/00; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor H01L28/40
• CPC Class Codes: H01L 28/86 having horizontal extensions

Abstract

The capacitor structure includes a first electrode having a plurality of teeth protruding in a comb shape from an electrode base of a first electrode line and a second electrode having a plurality of teeth protruding in a comb shape from an electrode base of a second electrode line, both formed in a first wiring layer. The first and second electrodes face each other with their teeth interdigitated with each other via a dielectric. At least one of the teeth of the first electrode is electrically connected with a third electrode line formed in a second wiring layer.

Claims

1. A capacitor structure formed on a semiconductor substrate, comprising:

first and second electrode lines formed in a first wiring layer;

a first electrode having a plurality of teeth protruding in a comb shape from an electrode base of the first electrode line; and

a second electrode having a plurality of teeth protruding in a comb shape from an electrode base of the second electrode line,

wherein the first and second electrodes face each other with their teeth interdigitated with each other via a dielectric, and

at least one of the teeth of the first electrode is electrically connected with a third electrode line formed in a second wiring layer different from the first wiring layer.

2. The capacitor structure of claim 1, further comprising a third electrode having a plurality of teeth protruding in a comb shape from an electrode base of the third electrode line,

wherein at least one of the teeth of the second electrode faces a corresponding one of the teeth of the third electrode.

3. The capacitor structure of claim 1, wherein vias are formed on top or bottom of the teeth of the first and second electrodes.

4. The capacitor structure of claim 1, wherein at least one of the teeth of the second electrode is electrically connected with a fourth electrode line formed in the second wiring layer,

the capacitor structure further comprises:

a third electrode having a plurality of teeth protruding in a comb shape from an electrode base of the third electrode line; and

a fourth electrode having a plurality of teeth protruding in a comb shape from an electrode base of the fourth electrode line,

the third and fourth electrodes face each other with their teeth interdigitated with each other via a dielectric, and

at least one of the teeth of the first electrode is connected with a corresponding one of the teeth of the third electrode via a via, and

at least one of the teeth of the second electrode is connected with a corresponding one of the teeth of the fourth electrode via a via.

5. The capacitor structure of claim 1, wherein the line width of at least one of the teeth of the first electrode is different from the other teeth.

6. The capacitor structure of claim 5, wherein the line width of each of the teeth of the first electrode is wider as the distance between a base end of the tooth and a base end of the first electrode line at the electrode base is longer.

7. A capacitor structure formed on a semiconductor substrate, comprising:

first and second electrode lines formed in a first wiring layer;

a first electrode having a spiral portion extending from the first electrode line; and

a second electrode having a spiral portion extending from the second electrode line,

wherein the first and second electrodes face each other with the spiral portions intertwined with each other via a dielectric, and

the spiral portion of the first electrode is electrically connected with a third electrode line formed in a second wiring layer different from the first wiring layer.

8. The capacitor structure of claim 7, further comprising a third electrode having a plurality of protrusions protruding from an electrode base of the third electrode line,

wherein at least part of the spiral portion of the second electrode faces corresponding part of the protrusions of the third electrode.

9. The capacitor structure of claim 7, wherein vias are formed on top or bottom of the spiral portions of the first and second electrodes.

10. The capacitor structure of claim 7, wherein the spiral portion of the second electrode is electrically connected with a fourth electrode line formed in the second wiring layer,

the capacitor structure further comprises:

a third electrode having a plurality of protrusions protruding from an electrode base of the third electrode line; and

a fourth electrode having a plurality of protrusions protruding from an electrode base of the fourth electrode line,

the third and fourth electrodes face each other with their protrusions interdigitated with each other via a dielectric,

the spiral portion of the first electrode is connected with the protrusions of the third electrode via vias, and

the spiral portion of the second electrode is connected with the protrusions of the fourth electrode via vias.