NONVOLATILE MEMORY DEVICE WITH WRITE ERROR SUPPRESSED IN READING DATA
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Abstract
A data write current from a pinned layer to a free layer is larger than a data write current from the free layer to the pinned layer. A data read current is smaller in value than the data write current. In the case where a difference in data read current between a high-resistance state and a low-resistance state is relatively small, a sense amplifier is connected so that the data read current flows from the pinned layer to the free layer, namely from a source line to a bit line.
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Citations
15 Claims
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1-10. -10. (canceled)
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11. A control device for memory cells arranged in rows and columns, the control device comprising:
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a plurality of first and second current lines provided correspondingly to memory cell columns respectively for supplying a current via a selected memory cell in data read operation or data write operation, each of said memory cells being provided between corresponding first and second current lines for executing magnetic nonvolatile data storage; a data read circuit supplying a data read current to the first and second current lines corresponding to said selected memory cell in said data read operation; and a data write circuit supplying a data write current to the first and second current lines corresponding to said selected memory cell in said data write operation, wherein each memory cell includes a magneto-resistance element comprising; a fixed magnetization layer electrically coupled with said corresponding first current line and magnetized in a first magnetization direction, a free magnetization layer electrically coupled with said corresponding second current line, and magnetized in one of said first magnetization direction and a second magnetization direction opposite to said first magnetization direction, based on spin-polarized electrons depending on a direction in which said data write current flows via said corresponding first and second current lines in said data write operation, and a barrier layer of a non-magnetic material provided between said fixed magnetization layer and said free magnetization layer, wherein said data read circuit is configured for supplying the data read current in a direction in which disturb is unlikely to occur, to the first and second current lines corresponding to said selected memory cell. - View Dependent Claims (12, 13, 14, 15)
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Specification