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THREE DIMENSIONAL NAND MEMORY

  • US 20080239818A1
  • Filed: 03/27/2007
  • Published: 10/02/2008
  • Est. Priority Date: 03/27/2007
  • Status: Active Grant
First Claim
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1. A monolithic, three dimensional NAND string, comprising:

  • a first memory cell located over a second memory cell;

    a select transistor;

    a first word line of the first memory cell;

    a second word line of the second memory cell;

    a bit line;

    a source line; and

    a select gate line of the select transistor;

    wherein;

    the first and the second word lines are not parallel to the bit line; and

    the first and the second word lines extend parallel to at least one of the source line and the select gate line.

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