SELECTIVE ALUMINUM DOPING OF COPPER INTERCONNECTS AND STRUCTURES FORMED THEREBY
First Claim
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1. A method comprising:
- heating a substrate comprising a patterned metallic structure to about 145 C or below in a reaction space;
introducing an aluminum co-reactant into the reaction space, wherein an aluminum material is formed on the patterned metallic structure, but not on non-metallic regions.
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Abstract
Methods and associated structures of forming a microelectronic device are described. Those methods may include heating a substrate comprising a patterned metallic region to about 145 C or below in a reaction space, introducing an aluminum co-reactant into the reaction space, wherein an aluminum material is formed on the patterned metallic region, but not on non-metallic regions.
96 Citations
15 Claims
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1. A method comprising:
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heating a substrate comprising a patterned metallic structure to about 145 C or below in a reaction space; introducing an aluminum co-reactant into the reaction space, wherein an aluminum material is formed on the patterned metallic structure, but not on non-metallic regions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A structure comprising:
a substrate comprising a patterned metallic region, wherein an aluminum material is disposed on at least one of a top surface and a bottom surface of the patterned metallic region, but is not disposed on a sidewall region of the patterned metallic region. - View Dependent Claims (10, 11, 12, 13, 15)
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14. The structure of claim 14 wherein the aluminum oxide comprises an etch stop layer.
Specification