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METHOD OF MAKING THREE DIMENSIONAL NAND MEMORY

  • US 20080242028A1
  • Filed: 03/27/2007
  • Published: 10/02/2008
  • Est. Priority Date: 03/27/2007
  • Status: Active Grant
First Claim
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1. A method of making a monolithic, three dimensional NAND string comprising a first memory cell located over a second memory cell, the method comprising:

  • growing a semiconductor active region of second memory cell; and

    epitaxially growing a semiconductor active region of the first memory cell on the semiconductor active region of the second memory cell in a different growth step from the step of growing the semiconductor active region of second memory cell.

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