METHOD OF MAKING THREE DIMENSIONAL NAND MEMORY
First Claim
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1. A method of making a monolithic, three dimensional NAND string comprising a first memory cell located over a second memory cell, the method comprising:
- growing a semiconductor active region of second memory cell; and
epitaxially growing a semiconductor active region of the first memory cell on the semiconductor active region of the second memory cell in a different growth step from the step of growing the semiconductor active region of second memory cell.
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Abstract
A method of making a monolithic, three dimensional NAND string including a first memory cell located over a second memory cell, includes growing a semiconductor active region of second memory cell, and epitaxially growing a semiconductor active region of the first memory cell on the semiconductor active region of the second memory cell in a different growth step from the step of growing the semiconductor active region of second memory cell.
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Citations
27 Claims
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1. A method of making a monolithic, three dimensional NAND string comprising a first memory cell located over a second memory cell, the method comprising:
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growing a semiconductor active region of second memory cell; and epitaxially growing a semiconductor active region of the first memory cell on the semiconductor active region of the second memory cell in a different growth step from the step of growing the semiconductor active region of second memory cell. - View Dependent Claims (2, 3, 4, 5, 6, 7, 9, 10)
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8. (canceled)
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11. (canceled)
- 12. A method of making a monolithic, three dimensional NAND string, comprising forming a first memory cell over a second memory cell, wherein a semiconductor active region of at least the first memory cell comprises recrystallized polysilicon.
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17. A method of making a monolithic, three dimensional NAND string, comprising:
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forming a first memory cell over a second memory cell; and planarizing at least one region of the NAND string. - View Dependent Claims (18, 19, 20, 21)
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22. A method of making a monolithic, three dimensional array of semiconductor memory devices, comprising:
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forming an array of select transistors in a first device level using only two photolithography steps; and forming an array of memory cells in a second device level different from the first device level using only two additional photolithography steps. - View Dependent Claims (23, 24, 25)
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26. A method of making a monolithic, three dimensional NAND device comprising a first NAND device level located over a second NAND device level, the method comprising:
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growing a semiconductor layer of the second NAND device level; and epitaxially growing a semiconductor layer of the first NAND device level over the semiconductor layer of the second NAND device level in a different growth step from the step of growing the semiconductor layer of second NAND device level. - View Dependent Claims (27)
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Specification