METHOD FOR FABRICATING TRENCH DIELECTRIC LAYER IN SEMICONDUCTOR DEVICE

• US 20080242045A1
• Filed: 12/06/2007
• Published: 10/02/2008
• Est. Priority Date: 03/27/2007
• Status: Abandoned Application

• Current Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Original Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Inventors: Park, Dong Su, LEE, Keum Bum, Lee, Eun A, Chang, Jun Soo
• Application Number:
  US11/951,965
• Publication Number:
  US 20080242045A1
• Time in Patent Office: Days
• US Class Current: 438/435
• CPC Class Codes: H01L 21/76232 of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls H01L21/76229 takes precedence

Abstract

A method for fabricating a trench dielectric layer in a semiconductor device is provided. A trench is formed in a semiconductor substrate and a liner nitride layer is then formed on an inner wall of the trench. A liner oxide layer formed on the liner nitride layer is nitrified in order to protect the liner nitride layer from being exposed. Subsequently, the trench is filled with one or more dielectric layers.

Claims

1. A method for fabricating a trench dielectric layer in a semiconductor device, comprising:

forming a trench in a semiconductor substrate;

forming a liner nitride layer on an inner wall of the trench;

forming a liner oxide layer on the liner nitride layer;

nitrifying the liner oxide layer; and

filling the trench with a dielectric layer.

2. The method of claim 1, further comprising oxidizing the inner wall of the trench to form an inner wall oxide layer before forming the liner nitride layer.

3. The method of claim 1, wherein the liner oxide layer has a thickness of about 80 Å

to 100 Å

.

4. The method of claim 1, wherein nitrifying the liner oxide layer includes performing a plasma nitrification treatment on the liner oxide layer in order that the liner oxide layer has a thickness of about 25 Å

to 35 Å

.

5. The method of claim 4, wherein the plasma nitrification treatment is performed for about 50 to 60 minutes at a temperature of about 800°

C. to 900°

C.

6. The method of claim 4, wherein the plasma nitrification treatment employs gas including NO, N₂O, N₂, or a mixture thereof.

7. The method of claim 1, wherein the forming of the dielectric layer includes:

forming a first dielectric layer on the nitrified liner oxide layer;

etching the first dielectric layer to expose a top of the trench, wherein, after being etched, the first dielectric layer has a predetermined thickness; and

filling the trench by forming a second dielectric layer on the first dielectric layer.

8. The method of claim 7, wherein the first dielectric layer includes a spin on dielectric layer and the second dielectric layer includes a high density plasma oxide layer.

9. A method for fabricating a trench dielectric layer in a semiconductor device, the method comprising:

forming a trench in a semiconductor substrate;

forming a liner nitride layer on an inner wall of the trench;

forming a liner oxide layer on the liner nitride layer;

nitrifying the liner oxide layer;

filling the trench with a first dielectric layer;

etching the first dielectric layer to expose a top of the trench, wherein, after being etching, the first dielectric layer has a predetermined thickness; and

filling the trench by forming a second dielectric layer on the first dielectric layer.

10. The method of claim 9, further comprising oxidizing the inner wall of the trench to form an inner wall oxide layer before forming the liner nitride layer.

11. The method of claim 9, wherein the liner oxide layer has a thickness of about 80 Å

to 100 Å

.

12. The method of claim 9, wherein nitrifying the liner oxide layer includes performing a nitrification treatment on the liner oxide layer in order that the liner oxide layer has a thickness of about 25 Å

to 35 Å

.

13. The method of claim 12, wherein the nitrification treatment includes a plasma process or a heat treatment process.

14. The method of claim 12, wherein the nitrification treatment is performed for about 50 minutes to 60 minutes under a temperature of about 800°

C. to 900°

C.

15. The method of claim 12, wherein the nitrification treatment employs gas including NO, N₂O, N₂ or a mixture thereof.

16. The method of claim 12, wherein the first dielectric layer includes a spin on dielectric layer.

17. The method of claim 12, wherein the second dielectric layer includes a high density plasma oxide layer.