SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURE THEREOF

• US 20080242067A1
• Filed: 04/29/2008
• Published: 10/02/2008
• Est. Priority Date: 11/18/2002
• Status: Abandoned Application

• Current Assignee: Masanobu Ogino, Yoshikatsu Suto, Yoshiro Baba
• Original Assignee: Masanobu Ogino, Yoshikatsu Suto, Yoshiro Baba
• Inventors: Baba, Yoshiro, Suto, Yoshikatsu, OGINO, Masanobu
• Application Number:
  US12/111,512
• Publication Number:
  US 20080242067A1
• Time in Patent Office: Days
• US Class Current: 438/542
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/2205 from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
• CPC Class Codes: H01L 21/2256 through the applied layer
• CPC Class Codes: H01L 29/06 characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
• CPC Class Codes: H01L 29/78 with field effect produced by an insulated gate H01L29/7725, H01L29/775, H01L29/778 take precedence

Abstract

A semiconductor substrate is disclosed, which comprises a lightly doped substrate that contains impurities at a low concentration, a heavily doped diffusion layer which is formed over a top of the lightly doped substrate and is higher in impurity concentration than the lightly doped substrate, and an epitaxial layer which is formed over a top of the heavily doped diffusion layer and contains impurities at a lower concentration than the heavily doped diffusion layer.

Claims

1. A method of manufacturing a semiconductor wafer comprising:

forming a heavily doped diffusion layer on a surface of a lightly doped semiconductor substrate that contains impurities at a low concentration, by carrying out a heat treatment in a gas atmosphere containing phosphorus, the heavily doped diffusion layer being higher in impurity concentration than the lightly doped semiconductor substrate; and

forming an epitaxial layer on a surface of the heavily doped diffusion layer, the epitaxial layer containing impurities at a lower concentration than the heavily doped diffusion layer.

2. The method of manufacturing a semiconductor wafer according to claim 1, wherein the method further comprises, before forming the epitaxial layer, mirror finishing the surface of the heavily doped diffusion layer on which the epitaxial layer is to be formed.

3. The method of manufacturing a semiconductor wafer according to claim 1, wherein the method further comprises, before forming the heavily doped diffusion layer, mirror finishing the surface of the lightly doped semiconductor substrate on which the heavily doped diffusion layer is to be formed.

4. The method of manufacturing a semiconductor wafer according to claim 1, wherein the heat treatment is carried out in the gas atmosphere containing at least POCl₃.

5. The method of manufacturing a semiconductor wafer according to claim 1, wherein the heat treatment in the gas atmosphere includes applying B₂O₃ powder to the surface of the lightly doped semiconductor substrate.

6. The method of manufacturing a semiconductor wafer according to claim 1, wherein the epitaxial layer is formed on the surface of the heavily doped diffusion layer, while a low impurity concentration portion of the semiconductor substrate is left.

7. The method of manufacturing a semiconductor wafer according to claim 1, wherein forming the heavily doped diffusion layer on the surface of the lightly doped semiconductor substrate includes forming heavily doped diffusion layers on a top surface and a back surface of the lightly doped semiconductor substrate;

the method further comprises removing the heavily doped diffusion layer formed on one of the top surface and the back surface of the lightly doped semiconductor substrate; and

wherein

the epitaxial layer is formed on a surface of the heavily doped diffusion layer formed on the other of the top surface and the back surface of the lightly doped semiconductor substrate.

8. The method of manufacturing a semiconductor wafer according to claim 7, wherein the method further comprises, before forming the epitaxial layer, mirror finishing the surface of the heavily doped diffusion layer on which the epitaxial layer is to be formed.

9. The method of manufacturing a semiconductor wafer according to claim 7, wherein the method further comprises, before forming the heavily doped diffusion layers, mirror finishing the top or back surface of the lightly doped semiconductor substrate on which the heavily doped diffusion layer are to be formed on which the epitaxial layer is to be formed.

10. The method of manufacturing a semiconductor wafer according to claim 7, wherein the heat treatment is carried out in the gas atmosphere containing at least POCl₃.

11. The method of manufacturing a semiconductor wafer according to claim 7, wherein the heat treatment in the gas atmosphere includes applying B₂O₃ powder to the surface of the lightly doped semiconductor substrate.

12. The method of manufacturing a semiconductor wafer according to claim 7, wherein the epitaxial layer is formed on the surface of the heavily doped diffusion layer, while a low impurity concentration portion of the semiconductor substrate is left.

13. The method of manufacturing a semiconductor wafer according to claim 1, wherein forming the heavily doped diffusion layer on the surface of the lightly doped semiconductor substrate includes forming heavily doped diffusion layers on a top surface and a back surface of the lightly doped semiconductor substrate;

the method further comprises dividing the semiconductor substrate into two divided substrates by cutting the semiconductor substrate at a center in a thickness direction thereof along the top and back surfaces thereof; and

wherein forming the epitaxial layer on the surface of the heavily doped diffusion layer includes forming epitaxial layers on the surfaces of the heavily doped diffusion layers formed on the top surface and the back surface of the lightly doped semiconductor substrate.

14. The method of manufacturing a semiconductor wafer according to claim 13, wherein the method further comprises, before forming the epitaxial layers, mirror finishing the surfaces of the heavily doped diffusion layers on which the epitaxial layers are to be formed.

15. The method of manufacturing a semiconductor wafer according to claim 13, wherein the method further comprises, before forming the heavily doped diffusion layers, mirror finishing the top and back surfaces of the lightly doped semiconductor substrate on which the heavily doped diffusion layers are to be formed.

16. The method of manufacturing a semiconductor wafer according to claim 13, wherein the heat treatment is carried out in the gas atmosphere containing at least POCl₃.

17. The method of manufacturing a semiconductor wafer according to claim 13, wherein the heat treatment in the gas atmosphere includes applying B₂O₃ powder to the surface of the lightly doped semiconductor substrate.

18. The method of manufacturing a semiconductor wafer according to claim 13, wherein the epitaxial layers are formed on the surfaces of the heavily doped diffusion layers, while a low impurity concentration portion of the semiconductor substrate is left.