Method for Manufacturing Memory Element
First Claim
1. A method for manufacturing a memory element, comprising the steps of:
- forming a first conductive layer;
forming a composition layer over the first conductive layer by discharging a composition in which nanoparticles comprising a conductive material covered with an organic material are dispersed in a solvent;
drying the composition layer; and
decomposing the organic material covering the nanoparticles which are positioned on the surface of the composition layer such that a memory layer comprising the nanoparticles covered with the organic material and a second layer comprising the nanoparticles not covered with the organic material are formed in the composition layer, wherein the memory layer is closer to the first conductive layer than the second layer;
forming a second conductive layer by sintering of the nanoparticles not covered with the organic material in the second layer.
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Accused Products
Abstract
A first conductive layer is formed, a composition layer over the first conductive layer is formed by discharging a composition in which nanoparticles comprising a conductive material covered with an organic material are dispersed in a solvent, and the composition layer is dried. Subsequently, pretreatment is performed in which the organic material covering the nanoparticles, which are positioned on a surface of the composition layer, is decomposed, and then baking is performed. In this manner, a second conductive layer is formed by sintering nanoparticles which are positioned on a surface of the composition layer. A memory layer is formed between the first conductive layer and the second conductive layer using the nanoparticles covered with the organic materials to which the pretreatment is not performed.
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Citations
31 Claims
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1. A method for manufacturing a memory element, comprising the steps of:
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forming a first conductive layer; forming a composition layer over the first conductive layer by discharging a composition in which nanoparticles comprising a conductive material covered with an organic material are dispersed in a solvent; drying the composition layer; and decomposing the organic material covering the nanoparticles which are positioned on the surface of the composition layer such that a memory layer comprising the nanoparticles covered with the organic material and a second layer comprising the nanoparticles not covered with the organic material are formed in the composition layer, wherein the memory layer is closer to the first conductive layer than the second layer; forming a second conductive layer by sintering of the nanoparticles not covered with the organic material in the second layer. - View Dependent Claims (2, 3, 4)
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5. A method for manufacturing a memory element, comprising the steps of:
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forming a first conductive layer; forming a composition layer over the first conductive layer by discharging a composition in which nanoparticles comprising a conductive material covered with an organic material are dispersed in a solvent; drying the composition to vaporize the solvent; exposing a surface of the composition layer to active oxygen; and baking the composition layer so that the surface of the composition layer is made to be a second conductive layer by sintering the nanoparticles exposed to the active oxygen and a memory layer is formed between the first conductive layer and the second conductive layer, wherein the memory layer includes nanoparticles covered with the organic material. - View Dependent Claims (6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method for manufacturing a memory element, comprising the steps of:
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forming a first conductive layer; forming a composition layer over the first conductive layer by discharging a composition in which nanoparticles comprising a conductive material covered with an organic material are dispersed in a solvent; drying the composition layer to vaporize the solvent; irradiating the composition layer with an ultraviolet ray in an ozone atmosphere; and baking the composition layer so that a portion of the composition layer which is irradiated with the ultraviolet ray is made to be a second conductive layer by sintering the nanoparticles and a memory layer is formed between the first conductive layer and the second conductive layer, wherein the memory layer includes nanoparticles covered with the organic material. - View Dependent Claims (16, 17, 18, 19, 20)
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21. A method for manufacturing a memory element, comprising the steps of:
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forming a first conductive layer; forming a composition layer over the first conductive layer by discharging a composition in which nanoparticles comprising a conductive material covered with an organic material are dispersed in a solvent; drying the composition layer to vaporize the solvent; irradiating the composition layer with an ultraviolet ray with a wavelength of less than or equal to 240 nm in the air; and baking the composition layer so that a portion of the composition layer which is irradiated with the ultraviolet ray is made to be a second conductive layer by sintering the nanoparticles and a memory layer is formed between the first conductive layer and the second conductive layer, wherein the memory layer includes the nanoparticles covered with the organic materials which are included in the composition. - View Dependent Claims (22, 23, 24, 25, 26)
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27. A method for manufacturing a memory element, comprising the steps of:
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forming a first conductive layer; forming a composition layer over the first conductive layer by discharging a composition in which nanoparticles comprising a conductive material covered with an organic material are dispersed in a solvent; drying the composition layer to vaporize the solvent; irradiating the composition layer with an ultraviolet ray with a wavelength of less than or equal to 175 nm in the air; and baking the composition layer so that a portion of the composition layer which is irradiated with the ultraviolet ray is made to be a second conductive layer by sintering the nanoparticles and a memory layer is formed between the first conductive layer and the second conductive layer, wherein the memory layer includes nanoparticles covered with organic materials which are included in the composition. - View Dependent Claims (28, 29, 30, 31)
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Specification