Method for forming strained silicon nitride films and a device containing such films
First Claim
1. A method of depositing a strained SiN film on a substrate in a process chamber, comprising:
- exposing the substrate to a gas comprising a silicon precursor;
exposing the substrate to a gas comprising a nitrogen precursor activated by a plasma source at a first level of plasma power and configured to react with the silicon precursor with a first reactivity characteristic; and
exposing the substrate to a gas comprising the nitrogen precursor activated by the plasma source at a second level of plasma power different from the first level and configured to react with the silicon precursor with a second reactivity characteristic such that a property of the SiN film formed on the substrate changes to provide the strained SiN film.
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Abstract
A method for forming a strained SiN film and a semiconductor device containing the strained SiN film. The method includes exposing the substrate to a gas including a silicon precursor, exposing the substrate to a gas containing a nitrogen precursor activated by a plasma source at a first level of plasma power and configured to react with the silicon precursor with a first reactivity characteristic, and exposing the substrate to a gas containing the nitrogen precursor activated by the plasma source at a second level of plasma power different from the first level and configured to react with the silicon precursor with a second reactivity characteristic such that a property of the silicon nitride film formed on the substrate changes to provide the strained silicon nitride film.
512 Citations
27 Claims
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1. A method of depositing a strained SiN film on a substrate in a process chamber, comprising:
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exposing the substrate to a gas comprising a silicon precursor; exposing the substrate to a gas comprising a nitrogen precursor activated by a plasma source at a first level of plasma power and configured to react with the silicon precursor with a first reactivity characteristic; and exposing the substrate to a gas comprising the nitrogen precursor activated by the plasma source at a second level of plasma power different from the first level and configured to react with the silicon precursor with a second reactivity characteristic such that a property of the SiN film formed on the substrate changes to provide the strained SiN film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 26)
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18. A method of depositing a strained SiN film on a substrate in a process chamber, comprising:
exposing the substrate to a gas pulse comprising a silicon precursor and a nitrogen precursor activated at a level of plasma power, wherein the level of plasma power is varied during the exposure. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 27)
Specification