SEMICONDUCTOR DEVICE AND METHOD FOR FORMING DEVICE ISOLATION FILM OF SEMICONDUCTOR DEVICE

• US 20080246149A1
• Filed: 11/27/2007
• Published: 10/09/2008
• Est. Priority Date: 04/06/2007
• Status: Abandoned Application

• Current Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Original Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Inventors: Jang, Chi Hwan, Kwak, Byung Hun
• Application Number:
  US11/945,848
• Publication Number:
  US 20080246149A1
• Time in Patent Office: Days
• US Class Current: 257/751
• CPC Class Codes: H01L 21/76879 by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating plating on semiconductors in general H01L21/288
• CPC Class Codes: H01L 2221/1094 Conducting structures comprising nanotubes or nanowires
• CPC Class Codes: H01L 23/5226 Via connections in a multilevel interconnection structure
• CPC Class Codes: H01L 23/53276 containing carbon, e.g. fullerenes superconducting fullerenes H10N60/853
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A method for manufacturing a semiconductor device comprises growing a carbon nano tube (CNT) in a contact hole to form a contact plug, thereby preventing diffusion of a tungsten layer. The method does not require forming a titanium nitride (TiN) film deposited to improve an adhesive strength. The CNT has an excellent electric conductivity and a high mechanical strength to improve characteristics of the device.

Claims

1. A semiconductor device comprising a contact plug for connecting a lower conductive layer electrically to an upper conductive layer, the contact plug comprising a carbon nano tube layer.

2. A semiconductor device comprising a contact plug for connecting a lower conductive layer electrically to an upper conductive layer,

wherein the contact plug comprises:

a metal barrier layer;

a carbon nano tube pad layer formed over the metal barrier layer; and

a carbon nano tube layer formed over the carbon nano tube pad layer.

3. A semiconductor device comprising:

a semiconductor substrate;

an interlayer insulating film formed over the semiconductor substrate;

a contact hole in the interlayer insulating film;

a metal barrier layer formed over the contact hole;

a carbon nano tube growth pad layer formed in the bottom of the contact hole; and

a carbon nano tube layer grown over the carbon nano tube growth pad layer to fill the contact hole.

4. The semiconductor device according to claim 3, wherein the metal barrier layer comprises titanium.

5. The semiconductor device according to claim 3, wherein the carbon nano tube growth pad layer comprises a nickel layer.

6. The semiconductor device according to claim 5, wherein the nickel layer has a thickness in a range of about 10 Å

to about 100 Å

.

7. The semiconductor device according to claim 5, wherein the nickel layer has a thickness in a range of about 45 Å

to about 55 Å

.

8. A method for manufacturing a semiconductor device, the method comprising:

forming an interlayer insulating film over a semiconductor substrate;

etching the interlayer insulating film to form a contact hole;

forming a metal barrier layer over the contact hole;

forming a carbon nano tube pad layer in the bottom of the contact hole; and

growing a carbon nano tube over the carbon nano tube pad layer, to fill the contact hole.

9. The method according to claim 8, wherein the metal barrier layer comprises titanium.

10. The method according to claim 8, wherein the carbon nano tube pad layer comprises a nickel layer.

11. The method according to claim 10, wherein the step of forming the nickel layer further comprises:

forming a mask pattern, which exposes the contact hole, over the interlayer insulating film;

forming the nickel layer in the bottom of the contact hole with the mask pattern as a mask; and

removing the mask pattern.

12. The method according to claim 10, wherein the nickel layer has a thickness in a range of about 10 Å

to about 100 Å

.

13. The method according to claim 10, wherein the nickel layer has a thickness in a range of about 45 Å

to about 55 Å

.

14. The method according to claim 8, wherein the carbon nano tube is formed by one or more methods selected from the group consisting of an electric discharge method, a laser deposition method, a plasma chemical vapor deposition method, a heat chemical vapor deposition method, a vapor synthesis method and an electrolysis method.