MULTI-CHANNEL SEMICONDUCTOR INTEGRATED CIRCUIT

• US 20080246529A1
• Filed: 03/14/2008
• Published: 10/09/2008
• Est. Priority Date: 04/05/2007
• Status: Active Grant

• Current Assignee: Panasonic Semiconductor Solutions Co., Ltd. (Winbond Electronics Corporation)
• Original Assignee: Panasonic Corporation (Panasonic Holdings Corporation)
• Inventors: Kaneda, Jinsaku, Matsunaga, Hiroki, Hishikawa, Naoki
• Granted Patent: US 7,759,987 B2
• Time in Patent Office: Days
• US Class Current: 327/333
• CPC Class Codes: H03K 3/35613 the input circuit having a differential configuration

Abstract

A semiconductor integrated circuit includes a high-side transistor, a low-side transistor, a level shift circuit for driving the high-side transistor, and a pre-driver circuit for driving the low-side transistor. A connection point of the high-side transistor and the low-side transistor serves as an output terminal. The level shift circuit has first and second N-type MOS transistors whose gates are driven by the pre-driver circuit. The semiconductor integrated circuit further includes a diode whose anode is connected to the drain of the first or second N-type MOS transistor to which the gate of the high-side transistor is not connected, and whose cathode is connected to the output terminal.

Claims

1. A semiconductor integrated circuit comprising:

a high-side transistor connected to a first reference potential;

a low-side transistor connected to a second reference potential;

a level shift circuit for driving the high-side transistor; and

a pre-driver circuit for driving the low-side transistor,

wherein a connection point of the high-side transistor and the low-side transistor serves as an output terminal,

the level shift circuit has first and second N-type MOS transistors whose gates are driven by the pre-driver circuit, and

the semiconductor integrated circuit further comprises a diode whose anode is connected to the drain of the first or second N-type MOS transistor to which the gate of the high-side transistor is not connected, and whose cathode is connected to the output terminal.

2. The semiconductor integrated circuit of claim 1, wherein

both the first and second N-type MOS transistors are switched OFF in accordance with a control signal from the pre-driver circuit, and

the output terminal temporarily holds a state as it is immediately before the control signal is input.

3. The semiconductor integrated circuit of claim 2, further comprising:

an output protection control circuit for generating the control signal using a plurality of binary input control signals and a sequential circuit.

4. The semiconductor integrated circuit of claim 2, further comprising:

an output protection control circuit for generating the control signal using a built-in asynchronous oscillator.

5. The semiconductor integrated circuit of claim 3, wherein

the output protection control circuit generates the control signal which switches OFF gate signals of both the first and second transistors after the binary control signals are input if the high-side transistor is ON and the low-side transistor is OFF before the binary control signals are input, and

the output protection control circuit generates the control signal which switches OFF both the first and second transistors after the binary control signals are input if the high-side transistor is OFF and the low-side transistor is ON before the binary control signals are input.

6. The semiconductor integrated circuit of claim 3, wherein

the output circuit has a plurality of bits.

7. The semiconductor integrated circuit of claim 3, wherein

the output protection control circuit is a single common circuit.

15. The semiconductor integrated circuit of claim 1, wherein

the high-side transistor is a thick-film P-type MOS transistor.

17. The semiconductor integrated circuit of claim 1, wherein

the output circuit is a display drive circuit for a flat panel display.

8. A semiconductor integrated circuit comprising:

a high-side transistor connected to a first reference potential;

a low-side transistor connected to a second reference potential;

a level shift circuit for driving the high-side transistor; and

a pre-driver circuit for driving the low-side transistor,

wherein a connection point of the high-side transistor and the low-side transistor serves as an output terminal,

the level shift circuit has first and second IGBTs whose gates are driven by the pre-driver circuit, and

the semiconductor integrated circuit further comprises a diode whose anode is connected to the collector of the first or second IGBT to which the gate of the high-side transistor is not connected, and whose cathode is connected to the output terminal.

9. The semiconductor integrated circuit of claim 8, wherein

both the first and second IGBTs are switched OFF in accordance with a control signal from the pre-driver circuit, and

the output terminal temporarily holds a state as it is immediately before the control signal is input.

10. The semiconductor integrated circuit of claim 9, further comprising:

an output protection control circuit for generating the control signal using a plurality of binary input control signals and a sequential circuit.

11. The semiconductor integrated circuit of claim 9, further comprising:

an output protection control circuit for generating the control signal using a built-in asynchronous oscillator.

12. The semiconductor integrated circuit of claim 10, wherein

the output protection control circuit generates the control signal which switches OFF gate signals of both the first and second transistors after the binary control signals are input if the high-side transistor is ON and the low-side transistor is OFF before the binary control signals are input, and

the output protection control circuit generates the control signal which switches OFF both the first and second transistors after the binary control signals are input if the high-side transistor is OFF and the low-side transistor is ON before the binary control signals are input.

13. The semiconductor integrated circuit of claim 10, wherein

the output circuit has a plurality of bits.

14. The semiconductor integrated circuit of claim 13, wherein

the output protection control circuit is a single common circuit.

16. The semiconductor integrated circuit of claim 8, wherein

the high-side transistor is a thick-film P-type MOS transistor.

18. The semiconductor integrated circuit of claim 8, wherein

the output circuit is a display drive circuit for a flat panel display.