LIGHT EMITTING DEVICE PROCESSES

• US 20080248602A1
• Filed: 03/17/2008
• Published: 10/09/2008
• Est. Priority Date: 07/22/2004
• Status: Abandoned Application

• Current Assignee: Luminus Devices Incorporated (Sanan Optoelectronics Company Limited)
• Original Assignee: Luminus Devices Incorporated (Sanan Optoelectronics Company Limited)
• Inventors: Lim, Michael, Erchak, Alexei A., Graff, John W., Duncan, Scott W., Minsky, Milan S., Weig, Matthew
• Application Number:
  US12/049,702
• Publication Number:
  US 20080248602A1
• Time in Patent Office: Days
• US Class Current: 438/26
• CPC Class Codes: H01L 21/2007 Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer H01L21/2011 takes precedence; bonding of semiconductor wafers to semiconductor wafers for junction formation H01L21/187
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate

Abstract

Light-emitting devices, and related components, processes, systems and methods are disclosed.

Claims

1. A method of forming light emitting devices comprising:

providing a plurality of multi-layer stacks including a substrate, a sacrificial layer, and a light generating region, wherein the multi-layer stacks have a side of at least 1 mm;

bonding the multi-layer stacks to a submount;

removing the substrate, in part, by exposing the sacrificial layer of the multi-layer stacks to electromagnetic radiation; and

forming respective light emitting devices from the multi-layer stacks.

2. The method of claim 1, wherein the electromagnetic radiation decomposes the sacrificial layer of the multi-layer stacks.

3. The method of claim 1, wherein the light emitting devices have a side of at least 1 mm.

4. The method of claim 1, wherein at least 50% of the total amount of light generated by the light-generating region that emerges from the light emitting devices is emitted through an upper surface of the multi-layer stacks.

5. The method of claim 1, comprising simultaneously exposing the sacrificial layer of the multi-layer stacks to electromagnetic radiation.

6. The method of claim 1, comprising sequentially exposing the sacrificial layer of the multi-layer stacks to electromagnetic radiation.

7. The method of claim 1, further comprising disposing a phosphor material layer over an upper surface of the multi-layer stacks.

8. The method of claim 7, wherein the phosphor material layer is compressed.

9. The method of claim 7, wherein the phosphor material layer has a thickness uniformity of less than about 20%.

10. The method of claim 1, wherein the sacrificial layer comprises a semiconductor material.

11. The method of claim 1, wherein the electromagnetic radiation passes through the substrate and is absorbed by the sacrificial layer.