Post-logic isolation of silicon regions for an integrated sensor
First Claim
1. A method of isolating regions of silicon in producing an integrated sensor comprising:
- delineating a sensor from a silicon-on-insulator (SOI) substrate utilizing a trench etch, wherein the SOI substrate comprises a silicon layer situated over a first insulator layer, wherein the first insulator layer is situated over a silicon substrate; and
releasing the sensor utilizing a lateral etch to undercut the sensor from the silicon substrate, wherein a masking agent is used to mask a vertical surface of the silicon layer from the lateral etch, wherein the first insulator layer and a photosensitive film are utilized to mask a horizontal surface of the silicon layer from the lateral etch, and wherein the isolating is performed after fabrication of compensating electronics for the integrated sensor.
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Accused Products
Abstract
In producing an integrated sensor, regions of silicon between compensating electronics and a sensor are electrically isolated, while the sensor is delineating and released. The described process can be performed at the end of a fabrication process after electronics processing (i.e., CMOS processing) and compensating electronics are formed. In an aspect, the sensor and a conductive bridge are simultaneously developed from a silicon-on-insulator (SOI) substrate. In an aspect, the sensor is undercut from a silicon substrate utilizing a lateral etch. A cavity is concurrently defined by the same lateral etch in the silicon layer, forming the conductive bridge connecting the sensor to a logic component. An isolation trench is defined in the silicon layer between the sensor components and the logic component. A polymer masks vertical surfaces from the lateral etch, and an insulator layer and photosensitive film mask horizontal surfaces from the lateral etch.
5 Citations
28 Claims
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1. A method of isolating regions of silicon in producing an integrated sensor comprising:
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delineating a sensor from a silicon-on-insulator (SOI) substrate utilizing a trench etch, wherein the SOI substrate comprises a silicon layer situated over a first insulator layer, wherein the first insulator layer is situated over a silicon substrate; and releasing the sensor utilizing a lateral etch to undercut the sensor from the silicon substrate, wherein a masking agent is used to mask a vertical surface of the silicon layer from the lateral etch, wherein the first insulator layer and a photosensitive film are utilized to mask a horizontal surface of the silicon layer from the lateral etch, and wherein the isolating is performed after fabrication of compensating electronics for the integrated sensor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of isolating regions of silicon in producing an integrated sensor comprising:
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shaping a conductive bridge from a silicon-on-insulator (SOI) substrate, utilizing a trench etch, wherein a silicon layer is situated over a first insulator layer, and the first insulator layer is situated over a silicon substrate; and defining a cavity under the conductive bridge, the conductive bridge connecting a sensor to a logic component, and defining an isolation trench between the sensor and the logic component, wherein defining the cavity comprises utilizing a lateral etch to etch the silicon substrate and the silicon layer under the conductive bridge, wherein a masking agent masks a vertical surface of a first portion of the silicon layer joined with the sensor from the lateral etch, and the first insulator layer and a photosensitive film mask a horizontal surface of the first portion of the silicon layer joined with the sensor from the lateral etch, wherein defining the isolation trench comprises separating the first portion of the silicon layer joined with the sensor and a second portion of the silicon layer joined with the logic component, and wherein the isolating is performed after fabrication of compensating electronics for the integrated sensor. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
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20. A method of isolating regions of silicon in producing an integrated sensor comprising:
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delineating a sensor from a silicon-on-insulator (SOI) substrate utilizing a trench etch, wherein a silicon layer is situated over a first insulator layer, and the first insulator layer is situated over a silicon substrate; releasing the sensor utilizing a footer undercut etch to undercut the silicon layer from the first insulator layer; and lateral etching the silicon substrate, wherein a masking agent is used to mask the silicon layer from the lateral etch, and a photosensitive film is utilized to mask a horizontal surface of the silicon layer from the lateral etch, wherein the first insulator layer is etched prior to lateral etching the silicon substrate to expose the silicon substrate to the lateral etching, and wherein the isolating is performed after fabrication of compensating electronics for the integrated sensor. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27, 28)
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Specification