Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same

• US 20080251808A1
• Filed: 06/10/2008
• Published: 10/16/2008
• Est. Priority Date: 08/01/2002
• Status: Active Grant

• Current Assignee: Nichia Corporation
• Original Assignee: Nichia Corporation
• Inventors: Sakamoto, Takahiko, Kususe, Takeshi
• Granted Patent: US 8,035,118 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
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• CPC Class Codes: H01L 2224/45169 Platinum (Pt) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48139 with an intermediate bond, e.g. continuous wire daisy chain
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48257 connecting the wire to a die pad of the item
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/48472 the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
• CPC Class Codes: H01L 2224/49113 the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 24/06 of a plurality of bonding areas
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 27/156 : two-dimensional arrays
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
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• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
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• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/10336 : Aluminium gallium arsenide [AlGaAs]
• CPC Class Codes: H01L 2924/12036 : PN diode
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/20751 : larger or equal to 10 microns less than 20 microns
• CPC Class Codes: H01L 2924/20752 : larger or equal to 20 microns less than 30 microns
• CPC Class Codes: H01L 2924/20753 : larger or equal to 30 microns less than 40 microns
• CPC Class Codes: H01L 2924/20754 : larger or equal to 40 microns less than 50 microns
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• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H01L 33/08 : with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/20 : with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/32 : containing nitrogen
• CPC Class Codes: H01L 33/385 : the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/60 : Reflective elements
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A nitride semiconductor light-emitting device includes a layered portion emitting light on a substrate. The layered portion includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The periphery of the layered portion is inclined, and the surface of the n-type semiconductor layer is exposed at the periphery. An n electrode is disposed on the exposed surface of the n-type semiconductor layer. This device structure can enhance the emission efficiency and the light extraction efficiency.

Claims

1. A nitride semiconductor light-emitting device comprising:

a plurality of structured portions, each of the structured portions including an n-type semiconductor layer provided on a lower side, and a p-type semiconductor layer provided on an upper side, an active layer between the n-type semiconductor layer and the p-type semiconductor layer, and an n-electrode; and

wherein each of the structured portions has at least an inclined side surface at which the surface of the n-type semiconductor layer is exposed and a lower surface with a larger width than a width of the upper side thereof in sectional view, and the n-electrode has a plurality of contact portions disposed on the surface of the n-type semiconductor layer in each of the structured portions.

2. The nitride semiconductor light-emitting device according to claim 1, wherein the n-electrode surrounds each of the structured portions.

3. The nitride semiconductor light-emitting device according to claim 1, further comprising a substrate, and the plurality of the structured portions being disposed on the substrate;

wherein the n-electrode continuously extends to the lower surface of the substrate through the side surfaces of the substrate.

4. The nitride semiconductor light-emitting device according to claim 1, wherein each of the structured portions has at least one of a circular shape and a rectangular shape.

5. The nitride semiconductor light-emitting device according to claim 1, wherein each of the structured portions has at least one of a hexagonal shape and a polygonal shape.

6. The nitride semiconductor light-emitting device according to claim 1, wherein the structured portions are respectively spaced away from each other, and the n-electrode has an interconnect portion extended from the contact portions, and the contact portions are connected to each other with the interconnect portion therebetween.

7. The nitride semiconductor light-emitting device according to claim 6, wherein the structured portions have respective p-electrodes in ohmic contact with the respective p-type semiconductor layers, and the p-electrodes are connected to each other.

8. The nitride semiconductor light-emitting device according to claim 1, further comprising a reflection layer covering the structured portions.

9. The nitride semiconductor light-emitting device according to claim 8, wherein the reflection layer is a metal layer covering the structured portions with an insulating layer therebetween.

10. The nitride semiconductor light-emitting device according to claim 9, wherein the metal layer serves as a connecting electrode for connecting p-electrodes of p-type semiconductor layers of the structured portions.

11. The nitride semiconductor light-emitting device according to claim 8, wherein the reflection layer comprises a dielectric multilayer film.

12. The nitride semiconductor light-emitting device according to claim 1, wherein the inclined side surface has a convex surface protuberating outward.