METHOD OF FABRICATING VERTICAL STRUCTURE COMPOUND SEMICONDUCTOR DEVICES
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Abstract
A method of fabricating a vertical structure opto-electronic device includes fabricating a plurality of vertical structure opto-electronic devices on a crystal substrate, and then removing the substrate using a laser lift-off process. The method then fabricates a metal support structure in place of the substrate. In one aspects the step of fabricating a metal support structure in place of the substrate includes the step of plating the metal support structure using at least one of electroplating and electro-less plating. In one aspect, the vertical structure is a GaN-based vertical structure, the crystal substrate includes sapphire and the metal support structure includes copper. Advantages of the invention include fabricating vertical structure LEDs suitable for mass production with high reliability and high yield.
256 Citations
51 Claims
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1-23. -23. (canceled)
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24. A method of fabricating a vertical structure opto-electronic device, comprising the step of:
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fabricating a plurality of vertical structure opto-electronic devices on a crystal substrate;
removing the substrate using a laser lift-off process; and
fabricating a metal support structure in place of the substrate. - View Dependent Claims (25, 26, 27, 28, 29, 30, 31, 32, 33)
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34. A method of fabricating a vertical structure opto-electronic device, comprising the step of:
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fabricating a plurality of vertical structure opto-electronic devices on a crystal substrate;
removing the substrate using a laser lift-off process; and
fabricating a metal support structure in place of the substrate, said metal support structure is formed of a material that includes Cu. - View Dependent Claims (38)
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- 35. The method of claim 347 wherein the step of fabricating a metal support structure in place of the substrate includes the step of plating the metal support structure using at least one of electroplating and electro less plating.
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42. A method of fabricating a GaN-based vertical structure opto-electronic device, comprising the step of:
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fabricating a plurality of vertical structure opto-electronic devices on a sapphire substrate;
removing the substrate using a laser lift-off process; and
fabricating a metal support structure in place of the substrate. - View Dependent Claims (43, 44, 45, 47, 48, 49, 50, 51)
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46. The method of claim 427 further comprising the step of:
fabricating a buffer layer between the opto-electronic devices and the metal support structure.
Specification