Method for Transferring Wafers
First Claim
1. Method for transfer onto a substrate of a thin layer or of a chip, this thin layer or this chip being supported by a support wafer and presenting a surface topology, therefore variations in height or level according to a direction perpendicular to a plane defined by the thin layer, this method including:
- the realization, above the surface of said thin layer or said chip, of at least one layer, called adhesive layer, and of at least one layer, called first barrier layer, the adhesive layer being in a material of which etching presents selectivity in relation to the material of the barrier layer,the transfer of the thin layer or of the chip onto said substrate,elimination of adhesive layers and of the first barrier layer, to find the initial topology again.
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Accused Products
Abstract
The invention concerns a method for preparing a thin layer (28) or a chip to be transferred onto another substrate, this method including the realization, above the surface of said thin layer or said chip, of at least one layer, called adhesive layer (25), and of at least one layer, called first barrier layer (22), the adhesive layer being made of a material of which etching presents selectivity in relation to the material of the barrier layer.
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Citations
60 Claims
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1. Method for transfer onto a substrate of a thin layer or of a chip, this thin layer or this chip being supported by a support wafer and presenting a surface topology, therefore variations in height or level according to a direction perpendicular to a plane defined by the thin layer, this method including:
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the realization, above the surface of said thin layer or said chip, of at least one layer, called adhesive layer, and of at least one layer, called first barrier layer, the adhesive layer being in a material of which etching presents selectivity in relation to the material of the barrier layer, the transfer of the thin layer or of the chip onto said substrate, elimination of adhesive layers and of the first barrier layer, to find the initial topology again. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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25. Method for processing of a thin layer or of a chip, this thin layer or this chip being supported by a support wafer and presenting a surface topology, therefore variations in height or in level according to a direction perpendicular to a plane defined by the thin layer, this method including:
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realization, above the surface of said thin layer or said chip, of at least one layer, called adhesive layer, and of at least one layer, called first barrier layer, the adhesive layer being in a material of which etching presents selectivity in relation to the material of the barrier layer. an assembly of the adhesive layer with a handle substrate, elimination of all or part of the support wafer, then; processing of the thin layer or of the chip from its face not assembled with said handle substrate, or processing of a face of the support wafer not assembled with the thin layer or the chip, elimination of the handle substrate, elimination of adhesive layers and of the first barrier layer to find the initial topology again. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47)
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48. Method for transfer onto a substrate of a thin layer or a chip, this thin layer or this chip being supported by a support wafer, and presenting a surface topology, therefore variations in height or level according to a direction perpendicular to a plane defined by the thin layer, the surface of this layer or of this chip including at least one layer of silicon nitride (Si3N4) or silicon oxynitride and metallic contact pads, this transfer method including:
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the realization, above the surface of said thin layer or of said chip, of at least one layer, called adhesive layer made of a material of which etching presents selectivity in relation to the nitride, the transfer of the thin layer or of the chip onto said substrate, elimination of the adhesive layer to find the initial topology again. - View Dependent Claims (49, 50, 51, 52, 53, 54)
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55. Method for processing a thin layer or a chip, this thin layer or this chip being supported by a support wafer, and presenting a surface topology, therefore variations in height or level according to a direction perpendicular to a plane defined by the thin layer, the surface of this layer or of this chip including at least one layer of silicon nitride (Si3N4) or silicon oxynitride and metallic contact pads, this transfer method including:
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the realization, above the surface of said thin layer or of said chip, of at least one layer, called adhesive layer, made of a material of which etching presents selectivity in relation to the nitride, assembly of the adhesive layer with a handle substrate, elimination of all or part of the support wafer, then; processing of the thin layer or of the chip from its face not assembled with said handle wafer, or processing of a face of the support wafer not assembled with the thin layer or the chip, elimination of the handle wafer, elimination of the adhesive layer, to find the initial topology again. - View Dependent Claims (56, 57, 58, 59, 60)
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Specification