METHODS FOR FORMING METAL INTERCONNECT STRUCTURE FOR THIN FILM TRANSISTOR APPLICATIONS
First Claim
1. A method of forming a metal interconnection structure in thin-film transistor applications, comprising:
- providing a substrate into a processing chamber configured to form a metal interconnection structure for TFT devices thereon;
supplying a first gas mixture into the chamber to deposit a metal layer on the substrate; and
supplying a second gas mixture into the chamber to deposit a barrier layer on the metal layer.
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Accused Products
Abstract
Methods for forming a metal interconnection structure in thin-film transistor applications are provided in the present invention. In one embodiment, the method may include providing a substrate into a processing chamber, supplying a first gas mixture into the chamber to deposit a metal layer on the substrate, and supplying a second gas mixture into the chamber to deposit a barrier layer on the metal layer. In another embodiment, a metal interconnection structure may include a substrate, a first barrier layer disposed on the substrate, a metal layer disposed on the substrate in a processing chamber, a second barrier layer disposed on the metal layer formed in the processing chamber a second barrier layer disposed on the metal layer formed in the processing chamber, wherein the first barrier layer, the metal layer and the second barrier layer are configured to form a metal interconnection structure for TFT devices.
53 Citations
25 Claims
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1. A method of forming a metal interconnection structure in thin-film transistor applications, comprising:
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providing a substrate into a processing chamber configured to form a metal interconnection structure for TFT devices thereon; supplying a first gas mixture into the chamber to deposit a metal layer on the substrate; and supplying a second gas mixture into the chamber to deposit a barrier layer on the metal layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method of forming a metal interconnection structure in thin-film transistor applications, comprising:
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providing a substrate into a processing chamber; supplying a first gas mixture into the chamber; sputtering source material from a target disposed in the processing chamber using the first gas mixture; reacting the sputtered material with the first gas mixture to form a metal layer on the substrate; supplying a second gas mixture into the chamber; sputtering source material from the target disposed in the processing chamber using the second gas mixture; and reacting the sputtered material with the second gas mixture to form a barrier layer on the metal layer. - View Dependent Claims (17, 18, 19)
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20. The method of claim 20, wherein the second gas mixture including a reactive gas and an inert gas, wherein the reactive gas is selected from a group consisting of N2, N2O, NO2, NH3 and the inert gas is selected from a group consisting of Ar, He and Kr.
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21. A metal interconnection structure utilized to form a gate electrode layer in a thin-film transistor, comprising:
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a substrate; a first barrier layer disposed on the substrate; a metal layer disposed on the substrate in a processing chamber; a second barrier layer disposed on the metal layer formed in the processing chamber, wherein the first barrier layer, the metal layer and the second barrier layer are configured to form a metal interconnection structure for TFT devices. - View Dependent Claims (22, 23, 24, 25)
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Specification