Method for Accelerated Etching of Silicon

• US 20080254635A1
• Filed: 09/18/2006
• Published: 10/16/2008
• Est. Priority Date: 09/30/2005
• Status: Abandoned Application

• Current Assignee: Robert Bosch GmbH
• Original Assignee: Robert Bosch GmbH
• Inventors: Schelling, Christoph, Benzel, Hubert, Pinter, Stefan, Pirk, Tjalf, Gonska, Julian, Leinenbach, Christina, Klopf, Frank
• Application Number:
  US12/067,569
• Publication Number:
  US 20080254635A1
• Time in Patent Office: Days
• US Class Current: 438/705
• CPC Class Codes: B81C 1/00531 Dry etching
• CPC Class Codes: B81C 2201/0135 Controlling etch progression
• CPC Class Codes: H01L 21/26506 in group IV semiconductors
• CPC Class Codes: H01L 21/266 using masks H01L21/26586 takes precedence
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 21/32135 by vapour etching only
• CPC Class Codes: H01L 21/78 with subsequent division of the substrate into plural individual devices cutting to change the surface-physical characteristics or shape of semiconductor bodies H01L21/304

Abstract

A method for the plasma-free etching of silicon using the etching gas ClF₃ or XeF₂ and its use are provided. The silicon is provided having one or more areas to be etched as a layer on the substrate or as the substrate material itself. The silicon is converted into the mixed semiconductor SiGe by introducing germanium and is etched by supplying the etching gas ClF₃ or XeF₂. The introduction of germanium and the supply of the etching gas ClF₃ or XeF₂ may be performed at the same time or alternatingly. In particular, it is provided that the introduction of germanium be performed by implanting germanium ions in silicon.

Claims

1-8. -8. (canceled)

9. A method for plasma-free etching of silicon having at least one area to be etched, existing as at least one of (a) a layer on a substrate and (b) a substrate material itself, comprising:

converting the silicon into a mixed semiconductor SiGe by introducing germanium; and

etching the silicon by supplying at least one of (a) CIF₃ and XeF₂ as an etching gas.

10. The method according to claim 9, wherein the introduction of germanium and the supplying of the etching gas are performed at a same time.

11. The method according to claim 9, wherein the introduction of germanium and the supply of the etching gas are performed alternatingly in time.

12. The method according to claim 9, wherein the introduction of germanium is performed by implanting germanium ions in silicon.

13. The method according to claim 9, wherein the conversion of the silicon into SiGe is performed by selective introduction of germanium only at the area to be etched.

14. The method according to claim 13, wherein the selective introduction of germanium into the silicon is achieved by a mask of the silicon.

15. The method according to claim 13, wherein the selective introduction of germanium into the silicon is achieved by focused germanium ion beams.

16. A method for at least one of (a) producing deep structures in silicon and (b) cutting up a substrate, comprising:

plasma-free etching of the silicon having at least one area to be etched, existing as at least one of (a) a layer on the substrate and (b) a substrate material itself including;

converting the silicon into a mixed semiconductor SiGe by introducing germanium; and

etching the silicon by supplying at least one of (a) CIF₃ and XeF₂ as an etching gas.

17. The method according to claim 16, wherein the deep structures include at least one of (a) through holes and (b) trenches.