SUBSTRATE PROCESSING APPARATUS

• US 20080257494A1
• Filed: 01/30/2008
• Published: 10/23/2008
• Est. Priority Date: 01/31/2007
• Status: Abandoned Application

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Nagaseki, Kazuya, Hayashi, Daisuke
• Application Number:
  US12/022,803
• Publication Number:
  US 20080257494A1
• Time in Patent Office: Days
• US Class Current: 156/345.27
• CPC Class Codes: C23C 16/4583 the substrate being supported substantially horizontally
• CPC Class Codes: C23C 16/46 characterised by the method used for heating the substrate C23C16/48, C23C16/50 take precedence
• CPC Class Codes: C23C 16/466 using thermal contact gas
• CPC Class Codes: H01J 2237/2001 Maintaining constant desired temperature
• CPC Class Codes: H01J 37/20 Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support introducing the objects H01J37/18
• CPC Class Codes: H01L 21/02071 the processing being a delineation, e.g. RIE, of conductive layers
• CPC Class Codes: H01L 21/67109 mainly by convection

Abstract

A substrate processing apparatus capable of rapidly raising and lowering the processing temperature of a substrate. The substrate processing apparatus has a mounting stage adapted to be mounted with a substrate and to control the processing temperature of the mounted substrate. The mounting stage comprises a temperature control device disposed in a mounting surface of the mounting stage for mounting the substrate thereon, a coolant inflow chamber into which a coolant is flowed, and a heat transmission/insulation switch-over chamber disposed between the temperature control device and the coolant inflow chamber so that a heat-transmitting gas is flowed into and vacuum-exhausted from the heat transmission/insulation switch-over chamber. The temperature control device has therein a gas inflow chamber into which a hot gas is flowed.

Claims

1. A substrate processing apparatus having a mounting stage adapted to be mounted with a substrate and to control the processing temperature of said mounted substrate, said mounting stage comprising:

a temperature control device disposed in a mounting surface of said mounting stage for mounting the substrate thereon;

a coolant inflow chamber into which a coolant is flowed; and

a heat transmission/insulation switch-over chamber disposed between said temperature control device and said coolant inflow chamber so that a heat-transmitting gas is flowed into and vacuum-exhausted from said heat transmission/insulation switch-over chamber,

wherein said temperature control device has therein a gas inflow chamber into which a hot gas is flowed.

2. A substrate processing apparatus as claimed in claim 1, wherein a material composing a wall delimiting the gas inflow chamber is any one of carbon, aluminum, copper, brass, iron, silver, aluminum nitride, and silicon carbide.

3. A substrate processing apparatus as claimed in claim 2, wherein the thickness of the wall is not less than 2 mm.

4. A substrate processing apparatus as claimed in claim 2, wherein said hot gas is a 200°

C. or higher hot gas.

5. A substrate processing apparatus having a mounting stage adapted to be mounted with a substrate and to control the processing temperature of said mounted substrate, said mounting stage comprising a temperature control device disposed in a mounting surface of said mounting stage for mounting said substrate thereon,

wherein said temperature control device has therein a gas inflow chamber into which a cold gas or a hot gas is flowed.

6. A substrate processing apparatus as claimed in claim 5, wherein a material composing a wall delimiting said gas inflow chamber is any one of carbon, aluminum, copper, brass, iron, silver, aluminum nitride, and silicon carbide.

7. A substrate processing apparatus as claimed in claim 6, wherein the thickness of the wall is not less than 2 mm.

8. A substrate processing apparatus as claimed in claim 5, wherein the temperature of the cold gas is not greater than −

20°

C. and the temperature of said hot gas is not less than 200°

C.

9. A substrate processing apparatus as claimed in claim 5, wherein the cold gas is a dry gas.